IPG20N04S4-09 Infineon Technologies, IPG20N04S4-09 Datasheet - Page 7
![MOSFET Power N-Channel 40V MOSFET](/photos/16/8/160865/tdson8_sml.jpg)
IPG20N04S4-09
Manufacturer Part Number
IPG20N04S4-09
Description
MOSFET Power N-Channel 40V MOSFET
Manufacturer
Infineon Technologies
Specifications of IPG20N04S4-09
Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
8.6 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
20 A
Power Dissipation
54 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TDSON-8
Lead Free Status / Rohs Status
Details
Other names
IPG20N04S409XT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPG20N04S4-09
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.0
13 Avalanche energy
E
parameter: I
15 Typ. gate charge
V
parameter: V
AS
GS
= f(T
= f(Q
150
120
90
60
30
12
10
0
8
6
4
2
0
25
0
j
)
gate
D
); I
DD
50
D
5
= 20 A pulsed
4)
75
4)
10
Q
T
gate
100
j
[°C]
[nC]
15
125
8 V
20
150
32 V
175
25
page 7
14 Drain-source breakdown voltage
V
16 Gate charge waveforms
BR(DSS)
Q
V
44
43
42
41
40
39
38
37
V
g (th)
g s(th)
-60
GS
= f(T
j
); I
Q
-20
g s
D
= 1 mA
20
Q
T
g
j
Q
60
[°C]
sw
Q
g d
IPG20N04S4-09
100
140
2010-10-08
Q
gate
180