IPG20N04S4-09 Infineon Technologies, IPG20N04S4-09 Datasheet - Page 7

• Manufacturer Part Number: IPG20N04S4-09
• Description: MOSFET Power N-Channel 40V MOSFET
• Manufacturer: Infineon Technologies

Specifications of IPG20N04S4-09

• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 8.6 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 54 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TDSON-8
• Lead Free Status / Rohs Status: Details
• Other names: IPG20N04S409XT

Rev. 1.0
13 Avalanche energy
E
parameter: I
15 Typ. gate charge
V
parameter: V
AS
GS
= f(T
= f(Q
150
120
90
60
30
12
10
0
8
6
4
2
0
25
0
j
)
gate
D
); I
DD
50
D
5
= 20 A pulsed
4)
75
4)
10
Q
T
gate
100
j
[°C]
[nC]
15
125
8 V
20
150
32 V
175
25
page 7
14 Drain-source breakdown voltage
V
16 Gate charge waveforms
BR(DSS)
Q
V
44
43
42
41
40
39
38
37
V
g (th)
g s(th)
-60
GS
= f(T
j
); I
Q
-20
g s
D
= 1 mA
20
Q
T
g
j
Q
60
[°C]
sw
Q
g d
IPG20N04S4-09
100
140
2010-10-08
Q
gate
180