BLA0912-250 NXP Semiconductors, BLA0912-250 Datasheet - Page 5

• Manufacturer Part Number: BLA0912-250
• Description: MOSFET Power LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLA0912-250

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 22 V
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-502
• Minimum Operating Temperature: - 65 C
• Lead Free Status / Rohs Status: Details
• Other names: BLA0912-250,112

NXP Semiconductors
BLA0912-250
Product data sheet
Table 9.
See
Striplines are on a Rodgers Duroid 6010 Printed-Circuit Board (PCB);
thickness = 0.64 mm
Component
Input circuit
L1
C1
L2
L3
C2
L4
C3
Output circuit
C4
L5
L6
C5
L7
L8
1/4 λ line
Figure
2.
Layout details
Description
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 November 2010
Dimensions
5 mm × 0.8 mm
1.2 mm × 3.5 mm
capacitor pad: 1 mm × 1 mm (1×)
curve: width 0.8 mm; angle 90°; radius 0.8 mm (10×)
vertical: 3.9 mm × 0.8 mm (2×)
vertical: 9.4 mm × 0.8 mm (3×)
horizontal: 0.5 mm × 0.8 mm (4×)
3 mm × 2 mm
4 mm × 6.5 mm
5 mm × 1 mm
2.5 mm × 2.3 mm
4 mm × 1 mm
curve: width 0.8 mm; angle 90°; radius 0.8 mm (6×)
vertical: 2.2 mm × 0.8 mm (2×)
vertical: 6 mm × 0.8 mm (1×)
horizontal: 1 mm × 0.8 mm (2×)
curve: width 1 mm; angle 90°; radius 0.8 mm
vertical: 5 mm × 1 mm
horizontal: 19 mm × 1 mm
8.8 mm × 30 mm + 0.2 mm × 13 mm
0.2 mm × 13 mm + 19 mm × 17.1 mm
3 mm × 6.6 mm
2.5 mm × 0.8 mm
Avionics LDMOS transistor
BLA0912-250
ε
r
= 10.2 F/m;
© NXP B.V. 2010. All rights reserved.
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