BLA0912-250 NXP Semiconductors, BLA0912-250 Datasheet - Page 8

• Manufacturer Part Number: BLA0912-250
• Description: MOSFET Power LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLA0912-250

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 22 V
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-502
• Minimum Operating Temperature: - 65 C
• Lead Free Status / Rohs Status: Details
• Other names: BLA0912-250,112

NXP Semiconductors
BLA0912-250
Product data sheet
Fig 6.
(W)
P
L
(1) f = 960 MHz
(2) f = 1030 MHz
(3) f = 1090 MHz
(4) f = 1140 MHz
(5) f = 1215 MHz
300
250
200
150
100
50
0
0
T
t
Load power as a function of input power;
typical values
p
h
= 100 μs; δ = 10 %.
= 25 °C; V
2
(5)
4
DS
= 36 V; I
6
8
(3)
Dq
(2)
10
= 150 mA; class-AB;
(4)
12
All information provided in this document is subject to legal disclaimers.
001aab080
P
i
14
(W)
(1)
Rev. 3 — 26 November 2010
16
Fig 7.
(%)
η
D
(1) f = 960 MHz
(2) f = 1030 MHz
(3) f = 1090 MHz
(4) f = 1140 MHz
(5) f = 1215 MHz
60
50
40
30
20
10
0
0
T
t
Efficiency as a function of load power;
typical values
p
h
= 100 μs; δ = 10 %.
= 25 °C; V
50
DS
100
= 36 V; I
(1)
150
Avionics LDMOS transistor
BLA0912-250
(3)
Dq
= 150 mA; class-AB;
(5)
(2)
200
(4)
© NXP B.V. 2010. All rights reserved.
P
250
L
001aab081
(W)
300
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