BLA1011-2 NXP Semiconductors, BLA1011-2 Datasheet - Page 4

• Manufacturer Part Number: BLA1011-2
• Description: MOSFET Power BULK TNS-MICP
• Manufacturer: NXP Semiconductors

Specifications of BLA1011-2

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 2.2 A
• Power Dissipation: 10 W
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-538A
• Minimum Operating Temperature: - 65 C
• Lead Free Status / Rohs Status: Details
• Other names: BLA1011-2,112

Philips Semiconductors
2003 Nov 19
handbook, halfpage
handbook, halfpage
Avionics LDMOS transistor
T
t
(1) f = 1060 MHz.
(2) f = 1030 MHz.
(3) f = 1090 MHz.
Fig.2
T
t
(1) P
(2) P
Fig.4
p
p
h
h
= 50 s;
= 50 s;
(dB)
= 25 C; V
= 25 C; V
G p
(W)
P L
20
16
12
1000
L
L
3
2
1
0
8
4
0
= 1 W.
= 2 W.
0
Load power as a function of drive power;
typical values.
Power gain as a function of frequency;
typical values.
= 2%.
= 2%.
DS
DS
= 36 V; I
= 36 V; I
10
1040
DQ
DQ
20
= 50 mA; class-AB;
= 50 mA; class-AB;
(3) P
(4) P
L
L
= 3 W.
= 4 W.
30
1080
(1)
(2)
(3)
40
f (MHz)
P D (mW)
MGU484
MGU485
(1)
(2)
(3)
(4)
1120
50
4
handbook, halfpage
handbook, halfpage
T
t
(1) f = 1060 MHz.
(2) f = 1030 MHz.
(3) f = 1090 MHz.
Fig.3
T
f = 1090 MHz; t
Fig.5
p
h
h
= 50 s;
(dB)
(W)
G p
= 25 C; V
P L
= 25 C; V
2.5
1.5
0.5
20
16
12
8
4
0
2
1
0
0
0
Power gain as a function of load power;
typical values.
Load power as a function of gate-source
voltage; typical values.
= 2%.
DS
DS
p
= 36 V; I
= 36 V; I
= 50 s; = 2%.
1
(1)
(2)
DQ
DQ
1
= 50 mA; class-AB;
= 50 mA; class-AB;
2
3
2
Product specification
BLA1011-2
(3)
P L (W)
4
V GS (V)
MGU483
MGU486
3
5