BLA1011-2 NXP Semiconductors, BLA1011-2 Datasheet - Page 5

• Manufacturer Part Number: BLA1011-2
• Description: MOSFET Power BULK TNS-MICP
• Manufacturer: NXP Semiconductors

Specifications of BLA1011-2

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 2.2 A
• Power Dissipation: 10 W
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-538A
• Minimum Operating Temperature: - 65 C
• Lead Free Status / Rohs Status: Details
• Other names: BLA1011-2,112

Philips Semiconductors
List of components for class-AB test circuit (see Fig.6)
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. American Technical Ceramics type 200B or capacitor of same quality.
3. American Technical Ceramics type 100B or capacitor of same quality.
2003 Nov 19
handbook, full pagewidth
C1, C8
C2
C3
C4, C10
C5
C6
C7
C9
C11
R1
R2
Avionics LDMOS transistor
Dimensions in mm.
The components are situated on one side of the Rogers 6006 printed-circuit board (thickness = 0.64 mm;
and serves as a ground plane. Earth connections from the component side to the ground plane are made by through-metallization.
COMPONENT
C1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 2
multilayer ceramic chip capacitor; note 3
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 3
tekelec trimmer; type 37283
multilayer ceramic chip capacitor; note 1
SMD resistor
SMD resistor
Fig.6 Printed-circuit board for class-AB test circuit.
C2
C3
7.5
DESCRIPTION
R1
5
110
C4
C5
R2
5
7
13.5
C6
C7
41
C10
r
C11
= 6.2), the other side is unetched
C8
C9
56 pF
7.5 pF
1.8 pF
20 nF
33 pF
5.6 pF
6.2 pF
0.4 to 2.5 pF
33 pF
2.2
22
Product specification
MGU487
BLA1011-2
(2 in parallel)
VALUE
60