BUK9514-55A NXP Semiconductors, BUK9514-55A Datasheet

MOSFET Power RAIL PWR-MOS

BUK9514-55A

Manufacturer Part Number
BUK9514-55A
Description
MOSFET Power RAIL PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK9514-55A

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.013 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
73 A
Power Dissipation
149 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
 Details
Other names
BUK9514-55A,127

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUK9514-55A
Manufacturer:
NXP
Quantity:
60 000
Part Number:
BUK9514-55A
Manufacturer:
NXP
Quantity:
12 500
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
P
I
D
DS
tot
BUK9514-55A
N-channel TrenchMOS logic level FET
Rev. 02 — 7 February 2011
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
12 V and 24 V loads
Automotive and general purpose
power switching
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
Conditions
T
V
see
T
j
mb
GS
≥ 25 °C; T
Figure
= 25 °C; see
= 5 V; T
1; see
mb
j
≤ 175 °C
= 25 °C;
Figure 2
Figure 3
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
Motors, lamps and solenoids
Min
-
-
-
Product data sheet
Typ
-
-
-
Max Unit
55
73
149
V
A
W

Related parts for BUK9514-55A

BUK9514-55A Summary of contents

Page 1

... BUK9514-55A N-channel TrenchMOS logic level FET Rev. 02 — 7 February 2011 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... R GS avalanche energy °C; unclamped j(init) Simplified outline SOT78A (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 February 2011 BUK9514-55A N-channel TrenchMOS logic level FET Min = Figure 12 ≤ sup = 5 V ...

Page 3

... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 February 2011 BUK9514-55A N-channel TrenchMOS logic level FET Min - - -10 Figure 1; - Figure 1 - ≤ 10 µ -55 -55 - ° Ω ...

Page 4

... I DSon D.C. δ Conditions see Figure 4 vertical in still air −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 February 2011 BUK9514-55A N-channel TrenchMOS logic level FET 03nd66 = 10 μ 100 μ 100 (V) DS Min Typ - - - 60 03nd67 t p δ = ...

Page 5

... ° ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 February 2011 BUK9514-55A N-channel TrenchMOS logic level FET Min Typ Max 1 2 500 - 2 100 ...

Page 6

... V (V) DS Fig 6. 03aa36 max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 February 2011 BUK9514-55A N-channel TrenchMOS logic level FET 16 DSon Drain-source on-state resistance as a function of gate-source voltage; typical values ( Forward transconductance as a function of drain current; typical values ...

Page 7

... V (V) GS Fig 10. Gate-source voltage as a function of gate 03aa33 R DSon (mΩ) 120 180 ( ° Fig 12. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 February 2011 BUK9514-55A N-channel TrenchMOS logic level FET charge; typical values 30 3 ...

Page 8

... Fig 14. Input, output and reverse transfer capacitances 100 175 ° 0.5 1.0 All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 February 2011 BUK9514-55A N-channel TrenchMOS logic level FET C iss C oss C rss 0 −2 − function of drain-source voltage; typical values 03nd58 = 25 ° ...

Page 9

... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 February 2011 BUK9514-55A N-channel TrenchMOS logic level FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13 ...

Page 10

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK9514-55A separated from data sheet BUK9514_9614_55A v.1. BUK9514_9614_55A v.1 20010207 BUK9514-55A Product data sheet Data sheet status ...

Page 11

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 February 2011 BUK9514-55A N-channel TrenchMOS logic level FET © NXP B.V. 2011. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 February 2011 BUK9514-55A N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 7 February 2011 Document identifier: BUK9514-55A ...

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