BUK9514-55A NXP Semiconductors, BUK9514-55A Datasheet - Page 4

• Manufacturer Part Number: BUK9514-55A
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9514-55A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.013 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 73 A
• Power Dissipation: 149 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK9514-55A,127

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK9514-55A
Product data sheet
Symbol
R
R
Fig 3.
Fig 4.
th(j-mb)
th(j-a)
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Z
(K/W)
th(j-mb)
(A)
I
D
10
10
10
10
10
10
10
−1
−2
−3
1
1
3
2
10
1
0.02
0.1
0.05
δ = 0.5
0.2
−6
P
Single Shot
t
p
R
DSon
T
10
= V
δ =
−5
DS
T
t
t
p
All information provided in this document is subject to legal disclaimers.
/ I
D
Conditions
see
vertical in still air
10
Figure 4
D.C.
Rev. 02 — 7 February 2011
−4
10
10
−3
10
−2
V
DS
N-channel TrenchMOS logic level FET
(V)
P
10
t
p
−1
T
t
100 μs
1 ms
10 ms
100 ms
t
p
p
BUK9514-55A
Min
-
-
= 10 μs
δ =
(s)
03nd66
03nd67
T
t
t
p
10
1
2
Typ
-
60
© NXP B.V. 2011. All rights reserved.
Max
1
-
Unit
K/W
K/W
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