BUK9504-40A NXP Semiconductors, BUK9504-40A Datasheet - Page 3

• Manufacturer Part Number: BUK9504-40A
• Description: MOSFET Power RAIL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BUK9504-40A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.004 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 198 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK9504-40A,127

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
BUK9504-40A
Product data sheet
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
Continuous current is limited by package.
Current is limited by power dissipation chip rating.
Current is limited by power dissipation chip rating
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
Limiting values
Conditions
T
R
T
T
T
see
T
T
pulsed; t
I
T
D
j
mb
mb
mb
mb
mb
j(init)
GS
≥ 25 °C; T
= 75 A; V
All information provided in this document is subject to legal disclaimers.
= 100 °C; V
= 25 °C; V
= 25 °C; pulsed; t
Figure 3
= 25 °C; see
= 25 °C
= 20 kΩ
= 25 °C; unclamped
p
≤ 10 µs; T
Rev. 2 — 7 February 2011
sup
j
≤ 175 °C
GS
≤ 40 V; R
GS
Figure 2
= 5 V; see
= 5 V; see
mb
p
= 25 °C
≤ 10 µs;
GS
= 50 Ω; V
Figure
Figure 1
1; see
GS
N-channel TrenchMOS logic level FET
= 5 V;
Figure 3
BUK9504-40A
[1]
[1]
[2]
[3]
[1]
Min
-
-
-15
-
-
-
-
-
-55
-55
-
-
-
-
© NXP B.V. 2011. All rights reserved.
15
175
175
Max
40
40
75
75
198
794
300
198
75
794
1.6
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
J
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