BUK9504-40A NXP Semiconductors, BUK9504-40A Datasheet - Page 7

• Manufacturer Part Number: BUK9504-40A
• Description: MOSFET Power RAIL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BUK9504-40A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.004 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 198 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK9504-40A,127

NXP Semiconductors
Table 6.
BUK9504-40A
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(A)
g
(S)
I
D
fs
400
300
200
100
100
80
60
40
20
0
0
function of drain-source voltage; typical values
drain current; typical values
Output characteristics: drain current as a
Forward transconductance as a function of
0
0
Characteristics
10
8
Parameter
source-drain voltage
reverse recovery time
recovered charge
2
7
20
6
4
…continued
40
V
GS
= 5 V
6
60
Conditions
I
see
I
V
All information provided in this document is subject to legal disclaimers.
S
S
8
GS
I
V
= 40 A; V
= 20 A; dI
D
DS
(A)
Figure 15
03nd95
03nd92
= -10 V; V
(V)
10
80
Rev. 2 — 7 February 2011
3
2.2
4
GS
S
/dt = -100 A/µs;
DS
= 0 V; T
= 30 V; T
Fig 6.
Fig 8.
j
= 25 °C;
R
(mΩ)
DSon
(A)
I
j
D
100
= 25 °C
80
60
40
20
5
4
3
2
0
of gate-source voltage; typical values
function of gate-source voltage; typical values
Drain-source on-state resistance as a function
Transfer characteristics: drain current as a
3
0
N-channel TrenchMOS logic level FET
T
1
6
j
= 175 °C
BUK9504-40A
Min
-
-
-
9
2
T
j
= 25 °C
Typ
0.85
260
531
12
3
© NXP B.V. 2011. All rights reserved.
V
V
GS
GS
Max
1.2
-
-
03nd94
03nd93
(V)
(V)
15
4
Unit
V
ns
nC
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