SI4467DY-T1-E3 Vishay, SI4467DY-T1-E3 Datasheet
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SI4467DY-T1-E3
Manufacturer Part Number
SI4467DY-T1-E3
Description
MOSFET Power 12V 12A 2.5W
Manufacturer
Vishay
Datasheet
1.SI4467DY-T1-E3.pdf
(5 pages)
Specifications of SI4467DY-T1-E3
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.011 Ohms
Drain-source Breakdown Voltage
- 12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
12 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4467DY-T1-E3
Manufacturer:
VISHAY
Quantity:
25 000
Part Number:
SI4467DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
b.
Document Number: 70816
S-59632—Rev. B, 12-Oct-98
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
V
Surface Mounted on FR4 Board.
t
DS
–12
12
10 sec.
G
S
S
S
(V)
1
2
3
4
Top View
SO-8
J
J
0.014 @ V
0.020 @ V
a, b
a, b
0.011 @ V
= 150 C)
= 150 C)
a
a
r
DS(on)
8
7
6
5
Parameter
Parameter
GS
GS
GS
a, b
a, b
D
D
D
D
( )
P-Channel 1.8-V (G-S) MOSFET
= –4.5 V
= –2.5 V
= –1.8 V
a, b
I
D
(A)
12
11
G
9
Steady State
T
T
T
T
t
A
A
A
A
P-Channel MOSFET
= 25 C
= 70 C
= 25 C
= 70 C
10 sec
D
S S S
D
D
D
Symbol
Symbol
T
R
R
J
V
V
I
P
P
DM
, T
I
I
I
thJA
thJA
DS
GS
D
D
S
D
D
stg
Typical
80
www.vishay.com FaxBack 408-970-5600
–55 to 150
Limit
–2.1
–12
Vishay Siliconix
2.5
1.6
9.8
12
40
8
Maximum
50
Si4467DY
Unit
Unit
C/W
C/W
W
W
V
V
A
A
A
C
2-1