SI4467DY-T1-E3 Vishay, SI4467DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4467DY-T1-E3
• Description: MOSFET Power 12V 12A 2.5W
• Manufacturer: Vishay

Specifications of SI4467DY-T1-E3

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.011 Ohms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 12 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

Si4467DY
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-4
–0.2
0.4
0.2
0.0
0.01
30
10
0.1
1
–50
0.00
2
1
10
–4
–25
Source-Drain Diode Forward Voltage
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.25
T
V
J
SD
= 150 C
Single Pulse
0
– Source-to-Drain Voltage (V)
Threshold Voltage
T
0.50
I
D
J
10
– Temperature ( C)
= 250 A
25
–3
0.75
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
T
J
= 25 C
75
1.00
10
100
–2
1.25
125
Square Wave Pulse Duration (sec)
1.50
150
10
–1
1
0.04
0.03
0.02
0.01
50
40
30
20
10
0
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
V
1
0.1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
GS
Notes:
P
DM
JM
– Gate-to-Source Voltage (V)
Single Pulse Power
– T
A
t
1
= P
Time (sec)
2
t
1
2
DM
Z
thJA
thJA
100
(t)
I
t
t
1
2
D
= 80 C/W
S-59632—Rev. B, 12-Oct-98
3
= 12 A
10
Document Number: 70816
4
600
100
600
5