SI4467DY-T1-E3 Vishay, SI4467DY-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI4467DY-T1-E3
• Description: MOSFET Power 12V 12A 2.5W
• Manufacturer: Vishay

Specifications of SI4467DY-T1-E3

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.011 Ohms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 12 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

Si4467DY
Vishay Siliconix
Notes
a.
b.
www.vishay.com FaxBack 408-970-5600
2-2
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
D i S
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
b
O S
Parameter
a
a
R
i
a
300 s, duty cycle
a
a
Symbol
2%.
V
r
I
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
g
Q
t
t
SD
t
rr
fs
gs
gd
r
f
g
V
V
I
I
V
D
DS
DS
= –6 V, V
V
I
F
= –9.6 V, V
–1 A, V
V
V
DS
V
V
V
V
V
1 A V
= –2.1 A, di/dt = 100 A/ s
I
DS
GS
GS
6 V V
DS
V
V
GS
DS
S
Test Condition
DS
DD
DD
= –2.1 A, V
= V
= –2.5 V, I
= –9.6 V, V
= –4.5 V, I
= –10 V, I
= –1.8 V, I
= 0 V, V
–10 V, V
= –6 V, R
GEN
GS
GS
6 V R
GS
, I
= –4.5 V, I
= –4.5 V, R
D
,
GS
= 0 V, T
= –250 A
GS
D
4 5 V I
D
D
GS
4 5 V R
D
L
L
GS
= –12 A
=
= –11 A
= –12 A
= –9 A
= 6
= –4.5 V
= 0 V
= 0 V
6
8 V
J
D
= 70 C
G
= –12 A
= 6
12 A
6
–0.45
Min
–20
0.0085
0.011
0.015
Typ
470
230
0.7
55
85
17
15
40
60
80
S-59632—Rev. B, 12-Oct-98
Document Number: 70816
Max
0.014
0.020
0.011
–1.2
120
120
900
450
120
–1
–5
80
100
Unit
nC
nA
ns
V
A
S
V
C
A
A