RRR015P03TL Rohm Semiconductor, RRR015P03TL Datasheet - Page 2

• Manufacturer Part Number: RRR015P03TL
• Description: MOSFET P-CH 30V 1.5A TSMT3
• Manufacturer: Rohm Semiconductor
• Series: -r

Specifications of RRR015P03TL

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 160 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 3.2nC @ 5V
• Input Capacitance (ciss) @ Vds: 230pF @ 10V
• Power - Max: 1W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

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*Pulsed
*Pulsed
Gate-source leakage
Drain-source breakdown voltage V
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Forward Voltage
 Electrical characteristics (Ta = 25C)
Body diode characteristics (Source-Drain) (Ta = 25C)
RRR015P03
Parameter
Parameter
Symbol
Symbol
R
V
l Y
(BR)DSS
C
t
t
I
I
C
DS (on)
C
Q
Q
V
GS (th)
d(on)
d(off)
GSS
DSS
Q
t
t
oss
rss
SD
iss
r
gs
gd
fs
f
g
l
*
*
*
*
*
*
*
*
*
*
Min.
1.0
Min.
30
1.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Typ.
115
170
190
230
3.2
1.2
0.7
40
33
12
40
13
8
-
-
-
-
-
-
2/5
Max.
Max.
2.5
1.2
160
240
270
10
1
-
-
-
-
-
-
-
-
-
-
-
-
Unit
Unit
m
nC
nC
nC
A
A
pF
pF
pF
ns
ns
ns
ns
V
V
S
V
V
I
V
V
I
I
I
V
V
V
f=1MHz
I
V
R
R
I
V
R
I
D
D
D
D
D
D
s
=1.5A, V
GS
DS
DS
DS
DS
GS
GS
GS
=1mA, V
=1.5A, V
=0.7A, V
=0.7A, V
=0.7A, V
L
G
=1.5A, V
G
=10
=10
=20V, V
=30V, V
=10V, I
=10V, I
=10V
=0V
=10V
=5V R
21.4
Conditions
Conditions
GS
GS
GS
GS
DD
DD
GS
L
D
D
DS
GS
=1mA
=1.5A
=0V
=0V
=10V
=4.5V
=4.0V
10
=0V
15V
=0V
15V
2010.07 - Rev.A
Data Sheet