RRR015P03TL Rohm Semiconductor, RRR015P03TL Datasheet - Page 3

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RRR015P03TL

Manufacturer Part Number
RRR015P03TL
Description
MOSFET P-CH 30V 1.5A TSMT3
Manufacturer
Rohm Semiconductor
Series
-r
Datasheet

Specifications of RRR015P03TL

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
160 mOhm @ 1.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
1.5A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
3.2nC @ 5V
Input Capacitance (ciss) @ Vds
230pF @ 10V
Power - Max
1W
Mounting Type
*
Package / Case
*
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RRR015P03TL
Manufacturer:
ROHM
Quantity:
18 000
Part Number:
RRR015P03TL
Manufacturer:
FSC
Quantity:
4 000
Part Number:
RRR015P03TL
Manufacturer:
ROHM/罗姆
Quantity:
20 000
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 Electrical characteristic curves
RRR015P03
1000
1000
100
100
10
3
2
1
0
10
0
Fig.4 Static Drain-Source On-State
0.1
0.1
Fig.7 Static Drain-Source On-State
T
Pulsed
V
Pulsed
Fig.1 Typical Output Characteristics( Ⅰ)
a
GS
DRAIN-SOURCE VOLTAGE : V
=25°C
DRAIN-CURRENT :I
= 4.0V
Resistance vs. Drain Current( Ⅰ)
0.2
DRAIN-CURRENT : I
Resistance vs. Drain Current( Ⅳ)
0.4
V
GS
= 3.0V
1
1
V
V
V
0.6
V
V
V
GS
GS
GS
V
T
T
T
T
GS
GS
GS
GS
= 10V
= 4.5V
= 4.0V
a
a
a
a
D
= 125°C
= 75°C
= 25°C
= 25°C
= 4.0V
= 4.5V
= 10V
= 2.5V
[A]
T
Pulsed
D
0.8
[A]
a
=25°C
DS
[V]
10
10
1
1000
100
3
2
1
0
0.1
10
10
1
0
0.01
0.1
Fig.2 Typical Output Characteristics( Ⅱ)
V
Pulsed
Fig.5 Static Drain-Source On-State
DRAIN-SOURCE VOLTAGE : V
V
Pulsed
DS
GS
= 10V
Fig.8 Forward Transfer Admittance
= 10V
2
DRAIN-CURRENT : I
Resistance vs. Drain Current( Ⅱ)
DRAIN-CURRENT : I
V
vs. Drain Current
GS
0.1
V
V
V
= 2.5V
4
GS
GS
GS
= 10V
= 4.5V
= 4.0V
3/5
1
6
V
1
T
T
T
T
GS
T
T
T
T
a
a
a
a
= 25°C
=25°C
=75°C
=125°C
a
a
a
a
T
Pulsed
= 3.0V
= 125°C
= 75°C
= 25°C
= 25°C
D
a
8
D
[A]
=25°C
[A]
DS
[V]
10
10
10
0.001
1000
0.01
100
0.01
0.1
0.1
10
10
10
1
1
Fig.6 Static Drain-Source On-State
0.1
0
0
V
Pulsed
V
Pulsed
V
Pulsed
Fig.3 Typical Transfer Characteristics
T
DS
GS
T
GS
GATE-SOURCE VOLTAGE : V
DRAIN-CURRENT : I
a
SOURCE-DRAIN VOLTAGE :V
T
T
a
= 10V
= 25°C
= 125°C
=0V
Resistance vs. Drain Current( Ⅲ)
a
a
= 4.5V
= 75°C
= 25°C
Fig.9 Reverse Drain Current
1
0.5
vs. Sourse-Drain Voltage
2
1
2010.07 - Rev.A
T
T
T
T
D
1
T
T
T
T
[A]
a
a
a
a
a
a
a
a
= 125°C
= 75°C
= 25°C
= 25°C
= 125°C
= 75°C
= 25°C
= 25°C
3
Data Sheet
GS
SD
[V]
1.5
10
[V]
4

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