RRR040P03TL Rohm Semiconductor, RRR040P03TL Datasheet - Page 3

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RRR040P03TL

Manufacturer Part Number
RRR040P03TL
Description
MOSFET P-CH 30V 4A TSMT3
Manufacturer
Rohm Semiconductor
Series
-r
Datasheet

Specifications of RRR040P03TL

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
45 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
10.5nC @ 5V
Input Capacitance (ciss) @ Vds
1000pF @ 10V
Power - Max
1W
Mounting Type
*
Package / Case
*
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RRR040P03TL
Manufacturer:
NEC
Quantity:
201
Part Number:
RRR040P03TL
Manufacturer:
ROHM
Quantity:
18 000
Part Number:
RRR040P03TL
Manufacturer:
ROHM/罗姆
Quantity:
20 000
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 Electrical characteristics curves
RRR040P03
1000
1000
100
100
10
4
3
2
1
0
10
0
0.1
0.1
Ta=25°C
Pulsed
V
Pulsed
Fig.7 Static Drain-Source On-State
GS
Fig.1 Typical Output Characteristics( Ⅰ)
Fig.4 Static Drain-Source On-State
DRAIN-SOURCE VOLTAGE : -V
= -4.0V
0.2
DRAIN-CURRENT : -I
Resistance vs. Drain Current( Ⅳ)
DRAIN-CURRENT : -I
Resistance vs. Drain Current( Ⅰ)
V
V
V
GS
GS
GS
0.4
= -10V
= -4.5V
= -4.0V
V
GS
= -2.8V
1
1
0.6
V
V
V
V
GS
GS
GS
GS
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
= -2.5V
= -4.0V
= -4.5V
= -10V
Ta=25°C
Pulsed
D
D
0.8
[A]
[A]
DS
[V]
10
10
1
1000
100
4
3
2
1
0
0.1
10
10
1
0
0.01
0.1
V
Pulsed
V
Pulsed
Fig.5 Static Drain-Source On-State
DRAIN-SOURCE VOLTAGE : -V
DS
GS
Fig.2 Typical Output Characteristics( Ⅱ)
= -10V
= -10V
Fig.8 Forward Transfer Admittance
2
DRAIN-CURRENT : -I
Resistance vs. Drain Current( Ⅱ)
DRAIN-CURRENT : -I
V
V
V
V
vs. Drain Current
GS
GS
GS
GS
0.1
= -10V
= -4.5V
=-4.0V
=-3.0V
4
3/5
V
GS
1
= -2.8V
6
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
V
GS
1
= -2.5V
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
D
D
Ta=25°C
Pulsed
8
[A]
[A]
DS
[V]
10
10
10
0.001
1000
0.01
100
0.01
100
0.1
0.1
10
10
10
1
1
0.1
0
V
Pulsed
0
V
Pulsed
Ta= - 25°C
Ta= 125°C
V
Pulsed
DS
Fig.3 Typical Transfer Characteristics
GS
Ta= 75°C
Ta= 25°C
GS
GATE-SOURCE VOLTAGE : -V
SOURCE-DRAIN VOLTAGE : -V
= -10V
= -4.5V
Fig.6 Static Drain-Source On-State
=0V
Fig.9 Reverse Drain Current
DRAIN-CURRENT : -I
1
Resistance vs. Drain Current( Ⅲ)
0.5
vs. Sourse-Drain Voltage
2
1
2010.04 - Rev.A
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
3
D
[A]
Data Sheet
GS
SD
[V]
1.5
10
[V]
4

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