RRR040P03TL Rohm Semiconductor, RRR040P03TL Datasheet - Page 4

• Manufacturer Part Number: RRR040P03TL
• Description: MOSFET P-CH 30V 4A TSMT3
• Manufacturer: Rohm Semiconductor
• Series: -r

Specifications of RRR040P03TL

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 10.5nC @ 5V
• Input Capacitance (ciss) @ Vds: 1000pF @ 10V
• Power - Max: 1W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

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RRR040P03
10000
1000
150
100
100
50
10
0
0.01
0
Fig.10 Static Drain-Source On-State
Ta=25°C
f=1MHz
V
GS
DRAIN-SOURCE VOLTAGE : -V
GATE-SOURCE VOLTAGE : -V
=0V
Fig.13 Typical Capacitance
Resistance vs. Gate Source Voltage
Crss
0.1
5
vs. Drain-Source Voltage
I
D
= -2.0A
Coss
1
I
D
= -4.0A
10
10
Ta=25°C
Pulsed
Ciss
GS
DS
[V]
[V]
100
15
10000
1000
100
10
1
0.01
t
d(on)
Fig.11 Switching Characteristics
DRAIN-CURRENT : -I
t
d(off)
0.1
4/5
t
r
t
f
1
Ta=25°C
V
V
R
Pulsed
DD
GS
G
=10Ω
= -15V
= -10V
D
[A]
10
8
6
4
2
0
0
Fig.12 Dynamic Input Characteristics
TOTAL GATE CHARGE : Qg [nC]
5
2010.04 - Rev.A
10
Ta=25°C
V
I
R
Pulsed
D
DD
= -4.0A
G
=10Ω
= -15V
Data Sheet
15