BUK9Y40-55B/C,115 NXP Semiconductors, BUK9Y40-55B/C,115 Datasheet - Page 3

• Manufacturer Part Number: BUK9Y40-55B/C,115
• Description: MOSFET N-CH 55V 26A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9Y40-55B/C,115

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 36 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 26A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 11nC @ 5V
• Input Capacitance (ciss) @ Vds: 1020pF @ 25V
• Power - Max: 59W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

NXP Semiconductors
BUK9Y40-55B_3
Product data sheet
Fig 1. Continuous drain current as a function of
Fig 3. Single-shot and repetitive avalanche rating; avalanche current as a function of avalanche period
(A)
I
30
20
10
D
0
V
mounting base temperature
(1) Single pulse;T
(2) Single pulse;T
(3) Repetitive.
GS
0
5V
50
j
j
= 25 °C.
= 150 °C.
100
I
(A)
AV
10
10
10
10
−1
−2
150
1
2
10
−3
T
mb
03nn93
(°C)
Rev. 03 — 22 February 2008
200
10
−2
10
−1
Fig 2. Normalized total power dissipation as a
P
(1)
(2)
(3)
(%)
der
120
80
40
0
P
function of mounting base temperature
1
0
der
t
AV
=
(ms)
03np80
P
N-channel TrenchMOS logic level FET
tot ( 25°C )
P
10
50
tot
× 100 %
BUK9Y40-55B
100
150
© NXP B.V. 2008. All rights reserved.
T
mb
03na19
(°C)
200
3 of 12