BUK9Y40-55B NXP Semiconductors, BUK9Y40-55B Datasheet

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK9Y40-55B

Manufacturer Part Number
BUK9Y40-55B
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
Table 1.
Symbol Parameter
I
P
Static characteristics
R
Avalanche ruggedness
E
D
tot
DS(AL)S
DSon
BUK9Y40-55B
N-channel TrenchMOS logic level FET
Rev. 03 — 22 February 2008
175 °C rated
Q101 compliant
12 V and 24 V loads
General purpose power switching
drain current
total power dissipation
drain-source on-state
resistance
non-repetitive
drain-source avalanche
energy
Quick reference
Conditions
V
see
T
V
T
13
I
R
T
D
mb
j
j(init)
GS
GS
GS
= 25 °C; see
= 26 A; V
Figure 1
= 25 °C; see
= 5 V; T
= 5 V; I
= 50 Ω; V
= 25 °C; unclamped
D
sup
mb
and
= 15 A;
GS
≤ 55 V;
= 25 °C;
Figure 12
= 5 V;
4
Figure 2
Logic level compatible
Very low on-state resistance
Automotive systems
Motors, lamps and solenoids
and
Min
-
-
-
-
Product data sheet
Typ
-
-
34
-
Max Unit
26
59
40
36
A
W
mJ

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BUK9Y40-55B Summary of contents

Page 1

... BUK9Y40-55B N-channel TrenchMOS logic level FET Rev. 03 — 22 February 2008 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications ...

Page 2

... sup °C; unclamped T j(init) see Figure ° ≤ 10 μs; pulsed ° Rev. 03 — 22 February 2008 BUK9Y40-55B N-channel TrenchMOS logic level FET Graphic symbol mbb076 Min Max - - and 4 ...

Page 3

... I AV (A) (1) 10 (2) 1 (3) −1 10 −2 10 −3 −2 − Rev. 03 — 22 February 2008 BUK9Y40-55B N-channel TrenchMOS logic level FET 03na19 50 100 150 T (° tot = × 100 % der P tot ( 25°C ) 03np80 10 t (ms) AV © NXP B.V. 2008. All rights reserved. ...

Page 4

... Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration BUK9Y40-55B_3 Product data sheet / Conditions see Figure Rev. 03 — 22 February 2008 BUK9Y40-55B N-channel TrenchMOS logic level FET 03nn94 = 10 μ 100 μ 100 (V) ...

Page 5

... T Figure ° MHz see Figure 15 = 2.2 Ω Ω G(ext ° Rev. 03 — 22 February 2008 BUK9Y40-55B N-channel TrenchMOS logic level FET Min Typ Max 0 1.1 1 2 500 - 2 ...

Page 6

... V ( Fig 9. Forward transconductance as a function of drain current; typical values Rev. 03 — 22 February 2008 BUK9Y40-55B N-channel TrenchMOS logic level FET 03np09 ( ° 03np07 ( °C;V = 25V DS © ...

Page 7

... V ( 0.8 0 − ( Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature Rev. 03 — 22 February 2008 BUK9Y40-55B N-channel TrenchMOS logic level FET 03ng52 max typ min 0 60 120 T (° A 03nb25 0 60 120 T (° ...

Page 8

... 175 ° ° 0.5 1.0 V Rev. 03 — 22 February 2008 BUK9Y40-55B N-channel TrenchMOS logic level FET 03np12 C iss C oss C rss − ( 03np05 1.5 (V) SD © NXP B.V. 2008. All rights reserved. ...

Page 9

... D 1 (1) ( max 2.2 0.9 0.25 0.30 4.10 5.0 4.20 2.0 0.7 0.19 0.24 3.80 4.8 REFERENCES JEDEC JEITA MO-235 Rev. 03 — 22 February 2008 BUK9Y40-55B N-channel TrenchMOS logic level FET detail ( 3.3 6.2 0.85 1.3 1.3 1.27 0.25 3.1 5.8 0.40 0.8 0.8 EUROPEAN ISSUE DATE ...

Page 10

... BUK9Y40_55B-01 20040528 BUK9Y40-55B_3 Product data sheet N-channel TrenchMOS logic level FET Data sheet status Change notice Product data sheet - Product data sheet - Product data sheet - Rev. 03 — 22 February 2008 BUK9Y40-55B Supersedes BUK9Y40-55B_2 BUK9Y40_55B-01 - © NXP B.V. 2008. All rights reserved ...

Page 11

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 03 — 22 February 2008 BUK9Y40-55B N-channel TrenchMOS logic level FET © NXP B.V. 2008. All rights reserved ...

Page 12

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 22 February 2008 Document identifier: BUK9Y40-55B_3 All rights reserved. ...

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