BUK7Y08-40B/C,115 NXP Semiconductors, BUK7Y08-40B/C,115 Datasheet - Page 13
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BUK7Y08-40B/C,115
Manufacturer Part Number
BUK7Y08-40B/C,115
Description
MOSFET N-CH 40V 75A SOT669
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK7Y08-40B115.pdf
(14 pages)
Specifications of BUK7Y08-40B/C,115
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
36.3nC @ 10V
Input Capacitance (ciss) @ Vds
2040pF @ 25V
Power - Max
105W
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
NXP Semiconductors
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9.4
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
10. Contact information
For more information, please visit:
For sales office addresses, please send an email to:
BUK7Y08-40B
Product data sheet
Trademarks
http://www.nxp.com
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 7 April 2010
salesaddresses@nxp.com
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
Nexperia, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug,
TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
N-channel TrenchMOS standard level FET
BUK7Y08-40B
© NXP B.V. 2010. All rights reserved.
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