BUK7Y08-40B/C,115 NXP Semiconductors, BUK7Y08-40B/C,115 Datasheet - Page 3
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BUK7Y08-40B/C,115
Manufacturer Part Number
BUK7Y08-40B/C,115
Description
MOSFET N-CH 40V 75A SOT669
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK7Y08-40B115.pdf
(14 pages)
Specifications of BUK7Y08-40B/C,115
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
36.3nC @ 10V
Input Capacitance (ciss) @ Vds
2040pF @ 25V
Power - Max
105W
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
BUK7Y08-40B
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
DS(AL)R
Continuous current is limited by package.
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Repetitive avalanche rating limited by an average junction temperature of 170 °C.
Refer to application note AN10273 for further information.
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive
drain-source
avalanche energy
repetitive drain-source
avalanche energy
Conditions
T
R
T
see
T
T
see
T
T
t
I
V
see
All information provided in this document is subject to legal disclaimers.
p
D
j
mb
mb
mb
mb
mb
GS
GS
≤ 10 µs; pulsed; T
≥ 25 °C; T
= 75 A; V
Figure 1
Figure 4
Figure 3
= 25 °C; V
= 100 °C; V
= 25 °C; t
= 25 °C; see
= 25 °C
= 10 V; T
= 20 kΩ
Rev. 03 — 7 April 2010
sup
j
≤ 175 °C
j(init)
p
GS
≤ 40 V; R
≤ 10 µs; pulsed;
GS
Figure 2
= 10 V; see
= 25 °C; unclamped
= 10 V; see
mb
= 25 °C
GS
= 50 Ω;
Figure
Figure 1
N-channel TrenchMOS standard level FET
4;
[1]
[1]
[2][3][4]
BUK7Y08-40B
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
175
Max
40
40
20
75
58.85
332
105
175
75
332
146
-
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
J
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