STFW60N65M5 STMicroelectronics, STFW60N65M5 Datasheet - Page 3

• Manufacturer Part Number: STFW60N65M5
• Description: MOSFET N-CH TO-3PF/ISOWATT 218
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STFW60N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 59 mOhm @ 23A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 46A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 139nC @ 10V
• Input Capacitance (ciss) @ Vds: 6810pF @ 100V
• Power - Max: 79W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11325-5

STFW60N65M5, STW60N65M5
1
Electrical ratings
Table 2.
1. Pulse width limited by safe operating area
2. I
Table 3.
Symbol
Symbol
R
dv/dt
R
I
DM
P
V
thj-case
thj-amb
V
E
T
I
SD
I
I
TOT
AR
T
T
ISO
GS
AS
stg
D
D
l
j
(1)
(2)
≤ 46 A, di/dt ≤ 400 A/µs, V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
Single pulse avalanche energy
(starting T
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s; Tc=25°C)
Storage temperature
Max. operating junction temperature
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Absolute maximum ratings
Thermal data
j
= 25 °C, I
Parameter
Parameter
C
D
Doc ID 18222 Rev 2
DD
= 25 °C
= I
= 400 V, V
AR
, V
DD
C
C
= 25 °C
= 100 °C
= 50 V)
j
Peak
max)
< V
(BR)DSS
TO-247
TO-247
0.49
255
- 55 to 150
Value
Value
1400
± 25
300
184
150
50
46
29
12
15
Electrical ratings
TO-3PF
TO-3PF
3500
1.58
79
°C/W
°C/W
Unit
V/ns
Unit
mJ
°C
°C
°C
W
V
A
A
A
A
V
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