STFW60N65M5 STMicroelectronics, STFW60N65M5 Datasheet - Page 6

• Manufacturer Part Number: STFW60N65M5
• Description: MOSFET N-CH TO-3PF/ISOWATT 218
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STFW60N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 59 mOhm @ 23A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 46A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 139nC @ 10V
• Input Capacitance (ciss) @ Vds: 6810pF @ 100V
• Power - Max: 79W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11325-5

Electrical characteristics
2.1
6/16
Figure 2.
Figure 4.
Figure 6.
100
100
0.1
0.1
(A)
(A)
10
10
I
I
D
D
1
1
140
120
100
0.1
0.1
(A)
80
40
20
60
I
D
0
0
Electrical characteristics (curves)
Safe operating area for TO-3FP
Safe operating area for TO-247
Output characteristics
2
1
1
4
V
GS
6
=10V
8
10
10
10
12 14 16 18
100
100
Tc=25°C
Tc=25°C
Tj=150°C
Single pulse
Tj=150°C
Single pulse
V
V
DS
DS
(V)
(V)
Doc ID 18222 Rev 2
100µs
100µs
10µs
1ms
10ms
10µs
1ms
10ms
AM09126v1
AM09127v1
AM09128v1
V
DS
7.5V
6.5V
5.5V
7V
6V
(V)
Figure 3.
Figure 5.
Figure 7.
10
10
10
K
140
120
100
-2
-1
(A)
80
60
40
20
I
-5
D
0
0.1
Single pulse
3
δ=0.5
0.2
Thermal impedance for TO-3FP
Thermal impedance for TO-247
Transfer characteristics
10
4
0.01
-4
V
STFW60N65M5, STW60N65M5
DS
5
10
0.02
=20V
-3
6
0.05
10
-2
7
8
10
-1
TO3PF
9
t
p
(s)
AM09129v1
V
GS
(V)