STFW60N65M5 STMicroelectronics, STFW60N65M5 Datasheet - Page 7

• Manufacturer Part Number: STFW60N65M5
• Description: MOSFET N-CH TO-3PF/ISOWATT 218
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STFW60N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 59 mOhm @ 23A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 46A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 139nC @ 10V
• Input Capacitance (ciss) @ Vds: 6810pF @ 100V
• Power - Max: 79W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11325-5

STFW60N65M5, STW60N65M5
Figure 8.
Figure 10. Capacitance variations
Figure 12. Normalized gate threshold voltage
10000
V
1000
GS(th)
1.00
0.80
(norm)
1.10
0.70
V
0.90
100
(V)
(pF)
12
10
10
GS
C
6
2
8
4
0
-50
1
0
0.1
Gate charge vs gate-source voltage Figure 9.
vs temperature
-25
V
DS
50
1
0
I
D
25
=250µA
V
DD
I
D
=23A
100
10
50
=520V
75
100
100 125
150
V
Q
DS
Doc ID 18222 Rev 2
AM09130v1
AM09132v1
AM09134v1
g
T
(V)
(nC)
J
500
400
100
0
300
200
Ciss
Crss
(°C)
Coss
Figure 11. Output capacitance stored energy
Figure 13. Normalized on resistance vs
R
R
0.053
0.057
0.055
0.043
0.051
0.049
0.047
0.045
DS(on)
DS(on)
E
(norm)
(µJ)
(Ω)
oss
0.5
1.9
1.5
1.3
0.9
0.7
2.1
1.7
1.1
25
10
20
15
0
5
-50
0
0
Static drain-source on resistance
temperature
-25
100
10
200 300
0
V
GS
25
I
20
D
=10V
Electrical characteristics
=23A
50
400
30
75
500 600
100 125
40
AM09131v1
AM09133v1
AM09135v1
T
I
V
D
J
DS
(A)
(°C)
(V)
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