NTTFS4929NTWG ON Semiconductor, NTTFS4929NTWG Datasheet - Page 3
![MOSFET N-CH 30V 34A 8WDFN](/photos/30/99/309910/wdfn-8_sml.jpg)
NTTFS4929NTWG
Manufacturer Part Number
NTTFS4929NTWG
Description
MOSFET N-CH 30V 34A 8WDFN
Manufacturer
ON Semiconductor
Series
-r
Datasheet
1.NTTFS4929NTWG.pdf
(7 pages)
Specifications of NTTFS4929NTWG
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.6A
Vgs(th) (max) @ Id
2.2V @ 250µA
Gate Charge (qg) @ Vgs
8.8nC @ 4.5V
Input Capacitance (ciss) @ Vds
920pF @ 15V
Power - Max
810mW
Mounting Type
*
Package / Case
*
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
17 mOhms
Forward Transconductance Gfs (max / Min)
26 S
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
10.6 A
Power Dissipation
2.11 W
Mounting Style
SMD/SMT
Fall Time
6.1 ns
Gate Charge Qg
8.8 nC
Rise Time
24 ns
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
ELECTRICAL CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 6)
DRAIN−SOURCE DIODE CHARACTERISTICS
PACKAGE PARASITIC VALUES
5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
Parameter
(T
Symbol
J
t
t
Q
V
d(on)
d(off)
t
R
L
L
L
= 25°C unless otherwise specified)
RR
t
t
t
t
SD
RR
a
b
D
G
r
f
S
G
http://onsemi.com
V
GS
V
V
I
GS
GS
S
I
D
= 0 V, d
= 20 A
= 15 A, R
Test Condition
= 10 V, V
= 0 V,
3
T
I
S
A
= 20 A
= 25°C
IS
/d
G
DS
t
= 100 A/ms,
= 3.0 W
= 15 V,
T
T
J
J
= 125°C
= 25°C
Min
0.054
18.7
17.8
0.80
12.3
0.38
Typ
6.4
3.9
0.9
9.5
9.1
1.3
0.6
22
Max
1.1
Unit
nC
nH
ns
ns
W
V