NTTFS4929NTWG ON Semiconductor, NTTFS4929NTWG Datasheet - Page 5

• Manufacturer Part Number: NTTFS4929NTWG
• Description: MOSFET N-CH 30V 34A 8WDFN
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTTFS4929NTWG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.6A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 8.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 920pF @ 15V
• Power - Max: 810mW
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 17 mOhms
• Forward Transconductance Gfs (max / Min): 26 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 10.6 A
• Power Dissipation: 2.11 W
• Mounting Style: SMD/SMT
• Fall Time: 6.1 ns
• Gate Charge Qg: 8.8 nC
• Rise Time: 24 ns
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

1000
1400
1200
1000
100
800
600
400
200
1.7
1.6
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
0.6
10
1
1
0
−50
0
1
Figure 9. Resistive Switching Time Variation
V
V
I
I
V
D
D
GS
DD
GS
= 15 A
Figure 5. On−Resistance Variation with
= 20 A
−25
C
C
C
= 10 V
= 4.5 V
= 10 V
V
oss
rss
iss
5
DS
Figure 7. Capacitance Variation
T
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
0
R
G
vs. Gate Resistance
, GATE RESISTANCE (W)
10
25
Temperature
50
15
10
75
20
TYPICAL CHARACTERISTICS
t
100
d(off)
T
V
J
GS
= 25°C
25
http://onsemi.com
= 0 V
125
t
t
t
r
f
d(on)
150
30
100
5
1.0E−04
1.0E−05
1.0E−06
1.0E−07
1.0E−08
1.0E−09
1.0E−10
1.0E−11
11
10
30
25
20
15
10
1
9
8
7
6
5
4
3
2
0
5
0
0.1
10
0
Figure 10. Diode Forward Voltage vs. Current
V
Figure 6. Drain−to−Source Leakage Current
Q
GS
Drain−to−Source Voltage vs. Total Charge
V
T
0.2
gs
GS
J
= 0 V
2
= 25°C
V
V
= 0 V
SD
DS
0.3
Figure 8. Gate−to−Source and
, DRAIN−TO−SOURCE VOLTAGE (V)
, SOURCE−TO−DRAIN VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
4
Q
0.4
gd
15
6
0.5
vs. Voltage
Q
T
0.6
8
0.7
10
20
0.8
T
T
T
J
J
J
12
= 125°C
= 150°C
= 25°C
V
V
I
D
T
0.9
GS
DD
J
= 20 A
= 25°C
= 10 V
= 15 V
14
1.0
1.1
25
16