NTTFS4929NTWG ON Semiconductor, NTTFS4929NTWG Datasheet - Page 4
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NTTFS4929NTWG
Manufacturer Part Number
NTTFS4929NTWG
Description
MOSFET N-CH 30V 34A 8WDFN
Manufacturer
ON Semiconductor
Series
-r
Datasheet
1.NTTFS4929NTWG.pdf
(7 pages)
Specifications of NTTFS4929NTWG
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.6A
Vgs(th) (max) @ Id
2.2V @ 250µA
Gate Charge (qg) @ Vgs
8.8nC @ 4.5V
Input Capacitance (ciss) @ Vds
920pF @ 15V
Power - Max
810mW
Mounting Type
*
Package / Case
*
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
17 mOhms
Forward Transconductance Gfs (max / Min)
26 S
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
10.6 A
Power Dissipation
2.11 W
Mounting Style
SMD/SMT
Fall Time
6.1 ns
Gate Charge Qg
8.8 nC
Rise Time
24 ns
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
50
40
30
20
10
0
0
10 V
0.5
Figure 1. On−Region Characteristics
V
DS
1
6.5 V
, DRAIN−TO−SOURCE VOLTAGE (V)
4.2 V
4.4 V
8.5 V
4.5 V
1.5
4 V
2.0E−02
1.8E−02
1.6E−02
1.4E−02
1.2E−02
1.0E−02
8.0E−03
6.0E−03
0.0180
0.0165
0.0150
0.0135
0.0120
0.0105
0.0090
0.0075
0.0060
2
2.5
10
3.0
Figure 4. On−Resistance vs. Drain Current and
3.8 V
T = 25°C
3
15
4.0
TYPICAL CHARACTERISTICS
Figure 3. On−Resistance vs. V
3.5
3.6 V
V
20
GS
3.4 V
I
2.8 V
4
5.0
D
3.0 V
3.2 V
T
, DRAIN CURRENT (A)
http://onsemi.com
= 2.6 V
J
= 25°C
Gate Voltage
25
V
4.5
V
GS
GS
6.0
V
= 4.5 V
GS
= 10 V
5
30
4
(V)
7.0
50
40
30
20
10
35
0
1
V
8.0
DS
40
T
1.5
GS
= 10 V
T
J
I
V
Figure 2. Transfer Characteristics
D
J
= 25°C
GS
= 20 A
= 25°C
9.0
45
, GATE−TO−SOURCE VOLTAGE (V)
2
T
J
= 125°C
10
50
2.5
T
J
3
= −55°C
3.5
4
4.5
5