NTTFS4929NTWG ON Semiconductor, NTTFS4929NTWG Datasheet - Page 4

• Manufacturer Part Number: NTTFS4929NTWG
• Description: MOSFET N-CH 30V 34A 8WDFN
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTTFS4929NTWG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.6A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 8.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 920pF @ 15V
• Power - Max: 810mW
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 17 mOhms
• Forward Transconductance Gfs (max / Min): 26 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 10.6 A
• Power Dissipation: 2.11 W
• Mounting Style: SMD/SMT
• Fall Time: 6.1 ns
• Gate Charge Qg: 8.8 nC
• Rise Time: 24 ns
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

50
40
30
20
10
0
0
10 V
0.5
Figure 1. On−Region Characteristics
V
DS
1
6.5 V
, DRAIN−TO−SOURCE VOLTAGE (V)
4.2 V
4.4 V
8.5 V
4.5 V
1.5
4 V
2.0E−02
1.8E−02
1.6E−02
1.4E−02
1.2E−02
1.0E−02
8.0E−03
6.0E−03
0.0180
0.0165
0.0150
0.0135
0.0120
0.0105
0.0090
0.0075
0.0060
2
2.5
10
3.0
Figure 4. On−Resistance vs. Drain Current and
3.8 V
T = 25°C
3
15
4.0
TYPICAL CHARACTERISTICS
Figure 3. On−Resistance vs. V
3.5
3.6 V
V
20
GS
3.4 V
I
2.8 V
4
5.0
D
3.0 V
3.2 V
T
, DRAIN CURRENT (A)
http://onsemi.com
= 2.6 V
J
= 25°C
Gate Voltage
25
V
4.5
V
GS
GS
6.0
V
= 4.5 V
GS
= 10 V
5
30
4
(V)
7.0
50
40
30
20
10
35
0
1
V
8.0
DS
40
T
1.5
GS
= 10 V
T
J
I
V
Figure 2. Transfer Characteristics
D
J
= 25°C
GS
= 20 A
= 25°C
9.0
45
, GATE−TO−SOURCE VOLTAGE (V)
2
T
J
= 125°C
10
50
2.5
T
J
3
= −55°C
3.5
4
4.5
5