MT47H128M16RT-3:C Micron Technology Inc, MT47H128M16RT-3:C Datasheet - Page 112
MT47H128M16RT-3:C
Manufacturer Part Number
MT47H128M16RT-3:C
Description
IC DDR2 SDRAM 2GB 667HZ 84FBGA
Manufacturer
Micron Technology Inc
Series
-r
Datasheet
1.MT47H128M16RT-3C.pdf
(134 pages)
Specifications of MT47H128M16RT-3:C
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
2G (128M x 16)
Speed
3ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
84-TFBGA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT47H128M16RT-3:C
Manufacturer:
MICRON
Quantity:
2 000
Company:
Part Number:
MT47H128M16RT-3:C
Manufacturer:
Micron Technology Inc
Quantity:
10 000
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Figure 65: Bank Write – with Auto Precharge
PDF: 09005aef824f87b6
2gbddr2.pdf – Rev. F 12/10 EN
DQS, DQS#
Command
Bank select
Address
DQ 6
CK#
CKE
A10
DM
CK
NOP 1
T0
Notes:
Bank x
ACT
RA
RA
T1
t CK
1. NOP commands are shown for ease of illustration; other commands may be valid at
2. BL = 4 and AL = 0 in the case shown.
3. Enable auto precharge.
4. WR is programmed via MR9–MR11 and is calculated by dividing
5. Subsequent rising DQS signals must align to the clock within
6. DI n = data-in from column n; subsequent elements are applied in the programmed order.
7.
8.
these times.
rounding up to the next integer value.
t
t
DSH is applicable during
DSS is applicable during
t RCD
NOP 1
T2
t CH
t CL
WRITE 2
Bank x
Col n
3
T3
WL ± t DQSS (NOM)
WL = 2
NOP 1
t
112
T4
t
DQSS (MAX) and is referenced from CK T6 or T7.
DQSS (MIN) and is referenced from CK T5 or T6.
t WPRE
NOP 1
T5
DI
Micron Technology, Inc. reserves the right to change products or specifications without notice.
n
t RAS
T5n
t DQSL t DQSH t WPST
2Gb: x4, x8, x16 DDR2 SDRAM
NOP 1
5
T6
T6n
Transitioning Data
NOP 1
T7
© 2006 Micron Technology, Inc. All rights reserved.
t
DQSS.
t
WR (in ns) by
NOP 1
WR 4
T8
Don’t Care
NOP 1
t
T9
CK and
WRITE
t RP
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