MT47H128M16RT-3:C Micron Technology Inc, MT47H128M16RT-3:C Datasheet - Page 121
MT47H128M16RT-3:C
Manufacturer Part Number
MT47H128M16RT-3:C
Description
IC DDR2 SDRAM 2GB 667HZ 84FBGA
Manufacturer
Micron Technology Inc
Series
-r
Datasheet
1.MT47H128M16RT-3C.pdf
(134 pages)
Specifications of MT47H128M16RT-3:C
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
2G (128M x 16)
Speed
3ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
84-TFBGA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT47H128M16RT-3:C
Manufacturer:
MICRON
Quantity:
2 000
Company:
Part Number:
MT47H128M16RT-3:C
Manufacturer:
Micron Technology Inc
Quantity:
10 000
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Figure 71: READ-to-Power-Down or Self Refresh Entry
Figure 72: READ with Auto Precharge-to-Power-Down or Self Refresh Entry
PDF: 09005aef824f87b6
2gbddr2.pdf – Rev. F 12/10 EN
DQS, DQS#
Command
DQS, DQS#
Command
Address
Address
CK#
CKE
A10
DQ
CK
CK#
CKE
A10
DQ
CK
Valid
READ
T0
Valid
READ
T0
Notes:
Notes:
NOP
T1
NOP
1. In the example shown, READ burst completes at T5; earliest power-down or self refresh
2. Power-down or self refresh entry may occur after the READ burst completes.
1. In the example shown, READ burst completes at T5; earliest power-down or self refresh
2. Power-down or self refresh entry may occur after the READ burst completes.
T1
RL = 3
entry is at T6.
entry is at T6.
RL = 3
NOP
T2
NOP
T2
NOP
T3
NOP
T3
DO
121
DO
DO
Valid
DO
T4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Valid
DO
T4
DO
DO
2Gb: x4, x8, x16 DDR2 SDRAM
Valid
T5
DO
Valid
T5
Transitioning Data
Power-down 2 or
self refresh entry
Transitioning Data
NOP 1
self refresh 2 entry
Power-down or
Power-Down Mode
T6
© 2006 Micron Technology, Inc. All rights reserved.
NOP 1
T6
t CKE (MIN)
t CKE (MIN)
T7
Don’t Care
Don’t Care
T7
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