BD9140MUV-E2 Rohm Semiconductor, BD9140MUV-E2 Datasheet - Page 14

• Manufacturer Part Number: BD9140MUV-E2
• Description: IC SWITCH REG 2A W/FET VQFN020
• Manufacturer: Rohm Semiconductor
• Series: -r
• Type: Step-Down (Buck), PWM - Current Moder

Specifications of BD9140MUV-E2

• Internal Switch(s): Yes
• Synchronous Rectifier: Yes
• Number Of Outputs: 1
• Voltage - Output: 2.5 V ~ 6 V
• Current - Output: 2A
• Frequency - Switching: 500kHz
• Voltage - Input: 4.5 V ~ 13.2 V
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

●Notes for use
© 2009 ROHM Co., Ltd. All rights reserved.
BD9141MUV
www.rohm.com
1. Absolute Maximum Ratings
2. Electrical potential at GND
3. Short-circuiting between terminals, and mismounting
4.Operation in Strong electromagnetic field
5. Thermal shutdown protection circuit
6. Inspection with the IC set to a pc board
7. Input to IC terminals
8. Ground wiring pattern
9 . Selection of inductor
While utmost care is taken to quality control of this product, any application that may exceed some of the absolute
maximum ratings including the voltage applied and the operating temperature range may result in breakage. If broken,
short-mode or open-mode may not be identified. So if it is expected to encounter with special mode that may exceed the
absolute maximum ratings, it is requested to take necessary safety measures physically including insertion of fuses.
GND must be designed to have the lowest electrical potential In any operating conditions.
When mounting to pc board, care must be taken to avoid mistake in its orientation and alignment. Failure to do so may
result in IC breakdown. Short-circuiting due to foreign matters entered between output terminals, or between output and
power supply or GND may also cause breakdown.
Be noted that using the IC in the strong electromagnetic radiation can cause operation failures.
Thermal shutdown protection circuit is the circuit designed to isolate the IC from thermal runaway, and not intended to
protect and guarantee the IC. So, the IC the thermal shutdown protection circuit of which is once activated should not
be used thereafter for any operation originally intended.
If a capacitor must be connected to the pin of lower impedance during inspection with the IC set to a pc board, the
capacitor must be discharged after each process to avoid stress to the IC. For electrostatic protection, provide proper
grounding to assembling processes with special care taken in handling and storage. When connecting to jigs in the
inspection process, be sure to turn OFF the power supply before it is connected and removed.
This is a monolithic IC with P
the N-layer of each element form a P-N junction, and various parasitic element are formed.
If a resistor is joined to a transistor terminal as shown in Fig 37.
The structure of the IC inevitably forms parasitic elements, the activation of which may cause interference among circuits,
and/or malfunctions contributing to breakdown. It is therefore requested to take care not to use the device in such
manner that the voltage lower than GND (at P-substrate) may be applied to the input terminal, which may result in
activation of parasitic elements.
If small-signal GND and large-current GND are provided, It will be recommended to separate the large-current GND
pattern from the small-signal GND pattern and establish a single ground at the reference point of the set PCB so that
resistance to the wiring pattern and voltage fluctuations due to a large current will cause no fluctuations in voltages of the
small-signal GND. Pay attention not to cause fluctuations in the GND wiring pattern of external parts as well.
It is recommended to use an inductor with a series resistance element (DCR) 0.1Ω or less. When using an inductor over
0.1Ω, be careful to ensure adequate margins for variation between external devices and this IC, including transient as
well as static characteristics. Furthermore, in any case, it is recommended to start up the output with EN after supply
voltage is within operation range.
Parasitic element
○P-N junction works as a parasitic diode if the following relationship is satisfied;
○if GND>Terminal B (at NPN transistor side),
Pin A
GND>Terminal A (at resistor side), or GND>Terminal B (at transistor side); and
a parasitic NPN transistor is activated by N-layer of other element adjacent to the above-mentioned parasitic diode.
N
P
+
N
GND
P
P substrate
P
+
+
N
Resistor
isolation between P-substrate and each element as illustrated below. This P-layer and
Pin A
Fig.36 Simplified structure of monorisic IC
Parasitic
element
Parasitic element
14/15
Pin B
N
P
+
C
B
N
E
GND
P
P substrate
Transistor (NPN)
P
+
N
GND
Other adjacent elements
Pin B
B
Technical Note
2009.09 - Rev.B
C
E
GND
Parasitic