BD3508MUV-E2 Rohm Semiconductor, BD3508MUV-E2 Datasheet
BD3508MUV-E2
Specifications of BD3508MUV-E2
Related parts for BD3508MUV-E2
BD3508MUV-E2 Summary of contents
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... Power Good BD3509MUV ●Description The BD3508MUV / BD3509MUV ultra low-dropout linear chipset regulator operates from a very low input supply, and offers ideal performance in low input voltage to low output voltage applications. It incorporates a built-in N-MOSFET power transistor to minimize the input-to-output voltage differential to the ON resistance (R lowering the dropout voltage in this way, the regulator realizes high current output (Iomax=3 ...
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... BD3508MUV,BD3509MUV ●Absolute Maximum Ratings (Ta=100℃) BD3508MUV / BD3509MUV Parameter Input Voltage 1 Input Voltage 2 Input Voltage 3 Enable Input Voltage Power Good Input Voltage Power Dissipation 1 Power Dissipation 2 Power Dissipation 3 Power Dissipation 4 Operating Temperature Range Storage Temperature Range Maximum Junction Temperature *1 Should not exceed Pd. ...
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... BD3508MUV,BD3509MUV ●Electrical Characteristics (Unless otherwise specified, Ta=25℃ VCC=5V Ven=3V VIN=1.8V VDD=3.3V R1=3.9KΩ R2=3.3KΩ) ◎BD3508MUV Parameter Bias Current VCC Shutdown Mode Current Output Voltage Maximum Output Current Output Short Circuit Current Output Voltage Temperature Coefficient Feedback Voltage 1 Feedback Voltage 2 ...
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... BD3508MUV,BD3509MUV ●Electrical Characteristics (Unless otherwise specified, Ta=25℃ VCC=5V Ven=3V VIN=1.5V VDD=3.3V R1=3.9KΩ R2=3.6KΩ) ◎BD3509MUV Parameter Bias Current VCC Shutdown Mode Current Output Voltage Maximum Output Current Output Voltage Temperature Coefficient Feedback Voltage 1 Feedback Voltage 2 Line Regulation 1 Line Regulation 2 ...
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... BD3508MUV,BD3509MUV ●Reference Data BD3508MUV Vo 45mV 50mV/div Io 3.0A 2A/div Io=0A→3A/3µsec t(5µsec/div) Fig.1 Transient Response (0→3A) Co=150µF×2, C =0.01uF FB 55mV Vo 50mV/div Io 3.0A 2A/div Io=3A→0A/3µsec t(5µsec/div) Fig.4 Transient Response (3→0A) Co=150µF×2 Ven 2V/div VNRCS 2V/div ...
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... BD3508MUV,BD3509MUV ●Reference Data VCC Ven VIN Vo VIN→Ven→VCC Fig.13 Input sequence 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0.65 0.60 0.55 0.50 - 100 Ta( ℃ ) Fig.16 Tj-ICC -60 - 120 150 Ta( ℃ ) Fig.19 Tj-IINSTB - 100 Ta( ℃ ) Fig.22 Tj-Ien www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. ...
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... BD3508MUV,BD3509MUV ●Reference Data BD3509MUV Vo 50mV/div 39mV Io 2A/div 4.0A Io=0A→4A/4µsec t(10µsec/div) Fig.25 Transient Response (0→4A) Co=22µF,C =0.01µF FB 37mV Vo 50mV/div Io 2A/div 4.0A Io=4A→0A/4µsec t(100µsec/div) Fig.28 Transient Response (4→0A) Co=22µF, C =0.01µF FB VEN 2V/div VNRCS ...
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... BD3508MUV,BD3509MUV ●Reference Data VEN VCC VIN Vo VIN→VEN→VCC Fig.37 Input sequence 1.5 1.2 0.9 0.6 0.3 0 -50 - 100 125 150 Ta( ℃ ) Fig.40 Tj-ICC 0.1 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 -50 - 100 125 150 Ta( ℃ ) Fig.43 Tj-IDDSTB ...
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... BD3508MUV,BD3509MUV ●Reference Data -50 - 100 125 150 Ta( ℃ ) Fig.49 Tj-RON (Vcc=5V/Vo=1.2V) ●Block Diagram BD3508MUV VCC VCC 6 EN Reference 7 Block Thermal Shutdown TSD BD3509MUV VCC 6 EN Reference 7 Block VDD 5 VCC PGOOD 4 POWER GOOD Thermal Shutdown www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. ...
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... Vo1 17 Vo2 FIN 18 Vo3 NRCS GND1 GND2 N.C N.C ●Pin Function Table BD3508MUV PIN PIN Name No. 1 GND1 Ground pin 1 2 GND2 Ground pin 2 3 N.C. No connection (empty) pin * 4 N.C. No connection (empty) pin * 5 N.C. No connection (empty) pin * 6 VCC Power supply pin ...
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... BD3508MUV,BD3509MUV ●Operation of Each Block ・AMP This is an error amp that functions by comparing the reference voltage (0.65V) with Vo to drive the output Nch FET (Ron=50mΩ). Frequency optimization helps to realize rapid transit response, and to support the use of functional polymer output capacitors. AMP input voltage ranges from GND to 2.7V, while the AMP output ranges from GND to VCC. When EN is OFF, or when UVLO is active, output goes LOW and the output NchFET switches OFF. ・ ...
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... BD3508MUV,BD3509MUV ●Timing Chart VIN VCC EN 0.65V(typ) NRCS Vo×0.9V(typ) Vo PGOOD (BD3509MUV) VCC ON/OFF VIN VCC EN 0.65V(typ) 0.65V(typ) NRCS Vo×0.9V(typ) Vo PGOOD (BD3509MUV) www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. Start up 80µs(typ) UVLO Start up 80µs(typ) 12/20 Technical Note t Hysteresis t 2010.04 - Rev.C ...
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... BD3508MUV,BD3509MUV ●Evaluation Board BD3508MUV ,BD3509MUV Evaluation Board Schematic ■ ■ BD3509MUV Evaluation Board Standard Component List ■ ■ Component Rating 0.1µF C6 1µF C8 10µF C16 22µF C20 0.01µF R4 100kΩ R7 0Ω R18 5.1kΩ R19 3.9kΩ ...
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... BD3508MUV,BD3509MUV BD3509MUV Evaluation Board Layout ■ ■ Silk Screen (Top) Middle Layer_1 ●Recommended Circuit Example Vo (1.25V/4A) C16 C18 R18 R19 www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. Silk Screen (Bottom) Middle Layer_2 C20 R4 VPGOOD 14/20 Technical Note TOP Layer Bottom Layer ...
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... BD3508MUV,BD3509MUV Recommended Component Value IC output voltage can be set with a configuration formula using the values for the internal reference output voltage (V R1/R2 3.6k / 3.9k Select resistance values that will avoid the impact of the V The recommended total resistance value is 10KΩ. This is the pull-up resistance for open drain pin. ...
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... BD3508MUV,BD3509MUV ●Heat Loss Thermal design should allow operation within the following conditions. Note that the temperatures listed are the allowed temperature limits, and thermal design should allow sufficient margin from the limits. 1. Ambient temperature Ta can be no higher than 100 ℃. 2. Chip junction temperature (Tj) can be no higher than 150℃. ...
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... BD3508MUV,BD3509MUV ●Input-Output Equivalent Circuit Diagram VCC VCC 1kΩ NRCS 1kΩ 1kΩ 1kΩ 10kΩ 1kΩ VCC Vo1 Vo2 50kΩ Vo3 Vo4 Vo5 PGOOD www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. VIN1 VIN2 VIN3 10kΩ VIN4 VIN5 VCC 1kΩ ...
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... Do not continue to use the IC after operating this circuit or use the environment where the operation of this circuit is assumed. TSD on temperature [°C] (typ.) BD3508MUV / BD3509MUV 10. Testing on application boards When testing the application board, connecting a capacitor to a pin with low impedance subjects the IC to stress. ...
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... BD3508MUV,BD3509MUV 11. Regarding input pin of the IC This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic diode or transistor. For example, the relation between each potential is as follows: When GND > ...
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... BD3508MUV,BD3509MUV ●Ordering part number Part No. Part No. 3508 3509 VQFN020V4040 4.0±0.1 1PIN MARK 0.08 S 2.1±0.1 C0.2 0 +0.05 0.25 1.0 -0.04 www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved Package MUV: VQFN020V4040 <Tape and Reel information> Tape Embossed carrier tape Quantity ...
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No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...