BUK9507-30B NXP Semiconductors, BUK9507-30B Datasheet - Page 4

• Manufacturer Part Number: BUK9507-30B
• Description: MOSFET Power HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9507-30B

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.005 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 108 A
• Power Dissipation: 157 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 98 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 135 ns
• Lead Free Status / Rohs Status: Details
• Other names: BUK9507-30B,127

NXP Semiconductors
BUK9507-30B
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
120
90
60
30
0
function of mounting base temperature
V
Normalized total power dissipation as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
GS
Capped at 75 A due to package
≥ 5 V
50
(A)
I
D
10
10
10
1
3
2
10
−1
100
Limit R
Capped at 75 A due to package
150
All information provided in this document is subject to legal disclaimers.
T
mb
DSon
03nn21
( ° C)
= V
Rev. 02 — 31 January 2011
1
200
DS
/ I
D
Fig 2.
P
(%)
der
120
DC
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
N-channel TrenchMOS logic level FET
50
V
DS
t
100 μ s
1 ms
10 ms
100 ms
(V)
p
= 10 μ s
BUK9507-30B
100
03nn19
10
2
150
© NXP B.V. 2011. All rights reserved.
T
mb
03na19
(°C)
200
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