BUK9507-30B NXP Semiconductors, BUK9507-30B Datasheet - Page 8

• Manufacturer Part Number: BUK9507-30B
• Description: MOSFET Power HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9507-30B

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.005 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 108 A
• Power Dissipation: 157 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 98 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 135 ns
• Lead Free Status / Rohs Status: Details
• Other names: BUK9507-30B,127

NXP Semiconductors
BUK9507-30B
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
(A)
I
DSon
D
100
75
50
25
20
15
10
0
5
0
function of gate-source voltage; typical values
of drain current; typical values
Transfer characteristics: drain current as a
0
0
3.2
40
1
3.4
T j = 175 ° C
3.6
80
2
3.8
Label is V
4
T j = 25 ° C
120
3
All information provided in this document is subject to legal disclaimers.
10
V
GS
5
GS
I
D
(V)
03nn17
03nn14
(A)
(V)
Rev. 02 — 31 January 2011
160
4
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.5
2.0
1.5
1.0
0.5
1.5
0.5
0
2
1
0
−60
−60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS logic level FET
0
0
BUK9507-30B
60
60
max
min
typ
120
120
© NXP B.V. 2011. All rights reserved.
T
T
j
j
(°C)
( ° C)
03ng52
03aa27
180
180
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