SJEP120R063 SEMISOUTH, SJEP120R063 Datasheet - Page 3

• Manufacturer Part Number: SJEP120R063
• Description: JFET, SIC, N-OFF, 1200V, 30A, TO247
• Manufacturer: SEMISOUTH

Specifications of SJEP120R063

• Transistor Type: JFET
• Breakdown Voltage Vbr: 1200V
• Power Dissipation Pd: 250W
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-247
• No. Of Pins: 3
• Rohs Compliant: Yes
• Continuous Drain Current Id: 30A

SJEP120R063 Rev1.4
10.00
1.00
0.10
0.01
Figure 1. Typical Output Characteristics
Figure 3. Typical Output Characteristics
80
70
60
50
40
30
20
10
Figure 5. Typical Gate-Source Current
24
21
18
15
12
0
9
6
3
0
2.0
0
0
I
I
D
D
= f(V
= f(V
V
V
1
I
GS
DS
DS
GS
DS
VDS, Drain-Source Voltage (V)
, Gate-Source Voltage (V)
); T
, Drain-Source Voltage (V)
); T
= f(V
j
2.5
j
= 150 ° C; parameter: V
2
2
= 25 ° C; parameter: V
GS
); parameter: T
3
3.0
4
4
j
150
25
GS
GS
o
o
C
C
5
2.5 V
1.5 V
3.0 V
2.0 V
1.5 V
2.5 V
3.0 V
2.0 V
3.5
6
6
PRELIMINARY
3/7
Figure 6. Typical Drain-Source On-resistance
Figure 4. Typical Transfer Characteristics
Figure 2. Typical Output Characteristics
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
40
35
30
25
20
15
10
60
50
40
30
20
10
5
0
0
0.0
0
0
I
R
D
DS(on)
= f(V
V
V
0.5
DS
DS
GS
= f(I
I
); T
, Drain-Source Voltage (V)
, Gate-Source Voltage (V)
D
10
= f(V
D
I
); V
j
D
= 100 ° C; parameter: V
SJEP120R063
, Drain Current (A)
1.0
2
GS
GS
Silicon Carbide
); V
= 3.0; parameter: Tj
DS
1.5
20
= 5 V
150
o
C
2.0
4
February 2011
30
GS
100
2.5
2.0 V
2.5 V
1.5 V
3.0 V
25
o
C
o
C
3.0
40
6