SJEP120R063 SEMISOUTH, SJEP120R063 Datasheet - Page 4

• Manufacturer Part Number: SJEP120R063
• Description: JFET, SIC, N-OFF, 1200V, 30A, TO247
• Manufacturer: SEMISOUTH

Specifications of SJEP120R063

• Transistor Type: JFET
• Breakdown Voltage Vbr: 1200V
• Power Dissipation Pd: 250W
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-247
• No. Of Pins: 3
• Rohs Compliant: Yes
• Continuous Drain Current Id: 30A

SJEP120R063 Rev1.4
Figure 7. Typical Drain-Source On-resistance
1.E+04
1.E+03
1.E+02
1.E+01
1.50
1.25
1.00
0.75
0.50
0.25
0.00
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
Figure 11. Gate Threshold Voltage
Figure 9. Typical Capacitance
R
0
0
0
DS(ON)
C = f(V
T
T
j
, Junction Temperature (
25
j
V
, Junction Temperature (°C)
Typical
= f(T
Max
DS
DS
300
, Drain-Source Voltage (V)
50
j
); I
); V
50
V
D
GS
th
= 20A; parameter: I
= f(T
= 0 V; f = 1 MHz
75
600
100
j
)
100
C
C
rss
10 mA
iss
125
o
900
150
C)
-2.0mV/
C
GS
oss
200 mA
150
50mA
o
1200
C
175
200
PRELIMINARY
4/7
Figure 8. Typical Drain-Source On-resistance
1E-03
1E-04
1E-05
1E-06
1E-07
1E-08
1E-09
0.052
0.051
0.050
0.049
0.048
0.047
0.046
0.045
0.044
0.043
0.042
Figure 12. Typical Drain-Source Leakage
3.0
2.5
2.0
1.5
1.0
0.5
0.0
BV
0.1
Q
0
0
Figure 10. Typical Gate Charge
g
DS
= f(V
, Drain-Source Blocking Voltage (V)
I
R
D
I
GS
DS(ON)
= f(V
, Gate-Source Current (mA)
GS
Q
); V
g
300
1.0
, Total Gate Charge (nC)
DS
15
= f(I
DS
); V
SJEP120R063
GS
= 600V; I
GS
); I
= 0V; parameter: Tj
Silicon Carbide
D
10.0
600
= 20A; T
30
D
= 10A, T
j
= 25
100.0
February 2011
900
45
j
o
= 25
C
100
150
25
o
C
o
o
1000.0
o
C
C
C
1200
60