74LVC1G384GW,125 NXP Semiconductors, 74LVC1G384GW,125 Datasheet - Page 14

• Manufacturer Part Number: 74LVC1G384GW,125
• Description: IC SWITCH SPST UMT5
• Manufacturer: NXP Semiconductors
• Series: 74LVCr
• Type: Analog Switchr

Specifications of 74LVC1G384GW,125

• Package / Case: 6-TSSOP (5 lead), SC-88A, SOT-353
• Function: Switch
• Circuit: 1 x SPST- NO
• On-state Resistance: 6 Ohm
• Voltage Supply Source: Single Supply
• Voltage - Supply, Single/dual (±): 1.65 V ~ 5.5 V
• Current - Supply: 0.1µA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Switch Configuration: SPST
• On Resistance (max): 34 Ohm (Typ) @ 1.95 V
• On Time (max): 10 ns (Typ) @ 1.95 V
• Off Time (max): 7.4 ns (Typ) @ 1.95 V
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 1.65 V
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Switch Current (typ): 0.0001 mA @ 3.3 V
• Multiplexer Configuration: Single SPST
• Number Of Inputs: 1
• Number Of Outputs: 1
• Number Of Channels: 1
• Analog Switch On Resistance: 34@1.95VOhm
• Power Supply Requirement: Single
• Single Supply Voltage (min): 1.65V
• Single Supply Voltage (typ): 3/5V
• Single Supply Voltage (max): 5.5V
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Power Dissipation: 250mW
• Mounting: Surface Mount
• Pin Count: 5
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 74LVC1G384GW-G; 74LVC1G384GW-G; 935274581125

NXP Semiconductors
Table 12.
At recommended operating conditions; typical values measured at T
74LVC1G384
Product data sheet
Symbol
Q
Fig 19. Test circuit for measuring total harmonic distortion
Fig 20. Test circuit for measuring the frequency response when switch is in ON-state
inj
Test conditions:
V
V
V
V
Adjust f
CC
CC
CC
CC
Additional dynamic characteristics
Parameter
charge injection
= 1.65 V: V
= 2.3 V: V
= 3 V: V
= 4.5 V: V
11.3 Test circuits
i
voltage to obtain 0 dBm level at output. Increase f
I
= 2.5 V (p-p).
I
I
= 2 V (p-p).
= 4 V (p-p).
I
= 1.4 V (p-p).
V
f i
V
IL
f i
IL
All information provided in this document is subject to legal disclaimers.
0.1 pF
50 Ω
C
Conditions
f
Section 11
i
L
= 1 MHz; R
V
V
V
V
V
600 Ω
= 0.1 nF; V
Y/Z
CC
CC
CC
CC
CC
Y/Z
E
E
Rev. 3 — 3 November 2010
…continued
= 1.8 V
= 2.5 V
= 3.3 V
= 4.5 V
= 5.5 V
V
V
CC
L
CC
gen
= 1 MΩ; see
= 0 V; R
i
Z/Y
frequency until dB meter reads −3 dB.
Z/Y
0.5V
0.5V
amb
CC
R L
gen
CC
R L
= 25
= 0 Ω;
C L
10 μF
C L
°
C.
dB
001aag482
001aag483
D
V
V
O
Min
-
-
-
-
-
O
74LVC1G384
Typ
3.3
4.1
5.0
6.4
7.5
© NXP B.V. 2010. All rights reserved.
Bilateral switch
Max
-
-
-
-
-
Unit
pC
pC
pC
pC
pC
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