BUK9508-55B NXP Semiconductors, BUK9508-55B Datasheet - Page 11

• Manufacturer Part Number: BUK9508-55B
• Description: MOSFET Power HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9508-55B

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 110 A
• Power Dissipation: 203 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 86 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 123 ns
• Lead Free Status / Rohs Status: Details
• Other names: BUK9508-55B,127

NXP Semiconductors
8. Revision history
Table 7.
BUK9508-55B
Product data sheet
Document ID
BUK9508-55B v.3
Modifications:
BUK95_96_9E08 v.2
(9397 750 12052)
Revision history
Release date
20100615
20030313
•
•
•
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BUK9508-55B separated from data sheet BUK95_96_9E08 v.2.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data
Product data sheet
Rev. 03 — 15 June 2010
Change notice
-
-
N-channel TrenchMOS logic level FET
BUK9508-55B
Supersedes
BUK95_96_9E08 v.2
-
© NXP B.V. 2010. All rights reserved.
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