BUK9508-55B NXP Semiconductors, BUK9508-55B Datasheet - Page 2

• Manufacturer Part Number: BUK9508-55B
• Description: MOSFET Power HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9508-55B

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 110 A
• Power Dissipation: 203 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 86 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 123 ns
• Lead Free Status / Rohs Status: Details
• Other names: BUK9508-55B,127

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK9508-55B
Product data sheet
Pin
1
2
3
mb
Type number
BUK9508-55B
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to
drain
Table 1.
[1]
Package
Name
TO-220AB
Symbol
Avalanche ruggedness
E
Dynamic characteristics
Q
DS(AL)S
GD
Continuous current is limited by package.
Quick reference data
Parameter
non-repetitive
drain-source
avalanche energy
gate-drain charge V
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 15 June 2010
Simplified outline
SOT78 (TO-220AB)
Conditions
I
R
T
V
see
D
…continued
j(init)
GS
DS
GS
= 75 A; V
Figure 13
= 5 V; I
= 44 V; T
= 50 Ω; V
= 25 °C; unclamped
1 2
mb
3
D
sup
= 25 A;
j
GS
= 25 °C;
≤ 55 V;
= 5 V;
N-channel TrenchMOS logic level FET
Graphic symbol
BUK9508-55B
mbb076
G
Min
-
-
© NXP B.V. 2010. All rights reserved.
D
S
Typ
-
16
Version
SOT78
Max Unit
352
-
2 of 14
mJ
nC