BUK9509-40B NXP Semiconductors, BUK9509-40B Datasheet

MOSFET Power HIGH PERF TRENCHMOS

BUK9509-40B

Manufacturer Part Number
BUK9509-40B
Description
MOSFET Power HIGH PERF TRENCHMOS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK9509-40B

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.007 Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
95 A
Power Dissipation
157 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Fall Time
89 ns
Minimum Operating Temperature
- 55 C
Rise Time
106 ns
Lead Free Status / Rohs Status
 Details
Other names
BUK9509-40B,127

Available stocks

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Part Number:
BUK9509-40B
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BUK9509-40B
Manufacturer:
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Quantity:
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Part Number:
BUK9509-40B
Manufacturer:
NXP
Quantity:
12 500
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
D
DS
tot
DSon
Low conduction losses due to low
on-state resistance
Q101 compliant
12 V loads
Automotive systems
BUK9509-40B
N-channel TrenchMOS logic level FET
Rev. 02 — 14 June 2010
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
V
see
T
V
T
V
T
see
j
mb
j
j
GS
GS
GS
≥ 25 °C; T
= 25 °C
= 25 °C;
Figure
Figure
= 25 °C; see
= 5 V; T
= 10 V; I
= 5 V; I
1; see
11; see
D
mb
j
D
≤ 175 °C
= 25 A;
= 25 A;
= 25 °C;
Figure 2
Figure 3
Figure 12
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
General purpose power switching
Motors, lamps and solenoids
[1]
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
6.2
7.6
Max Unit
40
75
157
7
9
V
A
W
mΩ
mΩ

Related parts for BUK9509-40B

BUK9509-40B Summary of contents

Page 1

... BUK9509-40B N-channel TrenchMOS logic level FET Rev. 02 — 14 June 2010 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... see Figure 13 Simplified outline SOT78 (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 June 2010 BUK9509-40B N-channel TrenchMOS logic level FET Min ≤ sup = °C; j Graphic symbol G mbb076 ...

Page 3

... ° see Figure °C; see Figure °C mb ≤ 10 µs; pulsed ° ≤ Ω sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 June 2010 BUK9509-40B N-channel TrenchMOS logic level FET Min Typ Max - - - [ [ [ 383 - - ...

Page 4

... P der (%) 150 200 T (°C) mb Fig DSon All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 June 2010 BUK9509-40B N-channel TrenchMOS logic level FET 100 150 Normalized total power dissipation as a function of mounting base temperature 03nm65 = 10 μ 100 μ 100 ms ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK9509-40B Product data sheet Conditions see Figure 4 vertical in still air −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 June 2010 BUK9509-40B N-channel TrenchMOS logic level FET Min Typ - - - 60 03nm66 t p δ ...

Page 6

... °C j from source lead 6 mm from package to source bond pad ; °C j All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 June 2010 BUK9509-40B N-channel TrenchMOS logic level FET Min Typ Max 1.1 1 ...

Page 7

... Label (V) DS Fig 6. 03ng53 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 June 2010 BUK9509-40B N-channel TrenchMOS logic level FET Min = 25 ° ° DSon (mΩ Drain-source on-state resistance as a function of gate-source voltage; typical values 80 g ...

Page 8

... Fig 10. Gate-source threshold voltage as a function of 03nm63 Label 200 300 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 June 2010 BUK9509-40B N-channel TrenchMOS logic level FET 2.5 GS(th) (V) 2.0 max 1.5 typ min 1.0 0.5 0 −60 0 ...

Page 9

... Fig 14. Input, output and reverse transfer capacitances 100 175 ° 0.0 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 June 2010 BUK9509-40B N-channel TrenchMOS logic level FET 5000 C iss 3750 C oss 2500 C rss 1250 0 −2 − function of drain-source voltage ...

Page 10

... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 June 2010 BUK9509-40B N-channel TrenchMOS logic level FET mounting base ( max. 15.0 3.30 3 ...

Page 11

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK9509-40B separated from data sheet BUK95_9609_40B v.1. BUK95_9609_40B v.1 20030415 (9397 750 11242) BUK9509-40B ...

Page 12

... All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 June 2010 BUK9509-40B N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 June 2010 BUK9509-40B N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 14 June 2010 Document identifier: BUK9509-40B ...

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