FDS6690 Fairchild Semiconductor, FDS6690 Datasheet - Page 2

• Manufacturer Part Number: FDS6690
• Description: MOSFET Power USE 512-FDS6690A
• Manufacturer: Fairchild Semiconductor

Specifications of FDS6690

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0125 Ohms
• Forward Transconductance Gfs (max / Min): 48 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 10 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 13 ns
• Lead Free Status / Rohs Status: No

Notes:
1. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
Electrical Characteristics (
Symbol
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
V
DSS
GSSF
GSSR
D(ON)
D(on)
r
D(off)
f
S
Scale 1 : 1 on letter size paper
FS
BV
GS(th)
V
DS(ON)
iss
oss
rss
SD
design while R
g
gs
gd
DSS
GS(th)
JA
DSS
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
/ T
/ T
J
J
CA
is determined by the user's board design.
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage Temp. Coefficient
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
(Note 2)
a. 50
T
pad of 2oz copper.
A
O
C/W on a 0.5 in
= 25
(Note 2)
O
C unless otherwise noted )
2
Conditions
V
I
V
V
V
V
I
V
V
V
V
V
V
V
V
V
V
D
D
f = 1.0 MHz
GS
DS
GS
GS
DS
GS
GS
GS
DS
DS
DS
GS
DS
GS
GS
= 250 µA, Referenced to 25
= 250 µA, Referenced to 25
= 15 V, I
= 24 V, V
= V
= 10 V, I
= 15 V, V
= 15 V, I
= 0 V, I
= 20 V, V
= -20 V, V
= 10 V, I
= 4.5 V, I
= 10 V, V
= 10 V , R
= 5 V
= 0 V, I
GS
b. 105
, I
pad of 2oz copper.
D
S
D
O
D
= 2.1 A
C/W on a 0.02 in
= 250 µA
D
D
= 250 µA
D
GS
DS
DS
GS
= 1 A
D
= 10 A
DS
GEN
= 10 A
= 10 A,
= 9 A
= 0 V
= 0 V
= 5 V
= 0 V,
= 0 V
=
(Note 2)
2
T
T
J
J
= 55°C
=125°C
o
o
C
C
Min
30
50
1
0.011
0.018
0.017
1340
0.73
Typ
-4.5
340
125
21
27
12
13
38
10
13
c. 125
2
5
4
of 2oz copper.
O
C/W on a 0.003 in
0.0135
0.023
Max
-100
0.02
100
2.1
1.2
10
22
24
60
18
18
1
3
JC
is guaranteed by
FDS6690 Rev.C
mV /
mV /
Units
µA
µA
nC
nC
nC
2
nA
nA
ns
ns
ns
ns
V
V
A
S
pF
pF
pF
A
V
pad
o
o
C
C