FDS6690 Fairchild Semiconductor, FDS6690 Datasheet - Page 4

• Manufacturer Part Number: FDS6690
• Description: MOSFET Power USE 512-FDS6690A
• Manufacturer: Fairchild Semiconductor

Specifications of FDS6690

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0125 Ohms
• Forward Transconductance Gfs (max / Min): 48 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 10 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 13 ns
• Lead Free Status / Rohs Status: No

Typical Electrical And Thermal Characteristics
10
0.01
Figure 9. Maximum Safe Operating Area.
100
Figure 7. Gate Charge Characteristics.
8
6
4
2
0
0.5
0.1
30
10
0
3
0.05
0.005
0.002
0.001
0.05
0.02
0.01
I = 10A
D
0.5
0.2
0.1
0.0001
1
R
SINGLE PULSE
0.1
JA
V
T = 25°C
=125°C/W
GS
A
5
0.2
= 10V
D = 0.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
0.5
0.2
g
0.1
0.05
10
Figure 11. Transient Thermal Response Curve .
0.001
0.02
1
0.01
2
Single Pulse
15
V
DS
5
= 5V
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
10
0.01
15V
20
20 30
10V
25
50
0.1
t , TIME (sec)
1
2000
1000
500
200
100
30
25
20
15
10
5
0
0.01
0.1
Figure 10. Single Pulse Maximum Power
Figure 8. Capacitance Characteristics.
1
f = 1 MHz
V
GS
= 0V
V
0.1
DS
0.5
, DRAIN TO SOURCE VOLTAGE (V)
P(pk)
SINGLE PULSE TIME (SEC)
Dissipation.
T - T
R
10
Duty Cycle, D = t /t
J
0.5
1
R
JA
t
1
A
JA
(t) = r(t) * R
1
t
= P * R
2
= 125°C/W
2
JA
1
(t)
5
10
2
R
SINGLE PULSE
JA
100
JA
T = 25°C
A
10
=125° C/W
C iss
C rss
C oss
50 100
300
FDS6690 Rev.C
30
300