FDS6690 Fairchild Semiconductor, FDS6690 Datasheet - Page 7

• Manufacturer Part Number: FDS6690
• Description: MOSFET Power USE 512-FDS6690A
• Manufacturer: Fairchild Semiconductor

Specifications of FDS6690

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0125 Ohms
• Forward Transconductance Gfs (max / Min): 48 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 10 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 13 ns
• Lead Free Status / Rohs Status: No

SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC-8 (FS PKG Code S1)
1 : 1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0774
9
September 1998, Rev. A