LM3208TL/NOPBPB National Semiconductor, LM3208TL/NOPBPB Datasheet

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LM3208TL/NOPBPB

Manufacturer Part Number
LM3208TL/NOPBPB
Description
Manufacturer
National Semiconductor
Datasheet

Specifications of LM3208TL/NOPBPB

Lead Free Status / Rohs Status
Supplier Unconfirmed
© 2006 National Semiconductor Corporation
LM3208
650mA Miniature, Adjustable, Step-Down DC-DC
Converter for RF Power Amplifiers
General Description
The LM3208 is a DC-DC converter optimized for powering
RF power amplifiers (PAs) from a single Lithium-Ion cell.
However, it may be used in many other applications. It steps
down an input voltage in the range from 2.7V to 5.5V to an
adjustable output voltage of 0.8V to 3.6V. Output voltage is
set by using a V
efficiency of the RF PA.
The LM3208 offers superior performance for mobile phones
and similar RF PA applications. Fixed-frequency PWM op-
eration minimizes RF interference. A shutdown function turns
the device off and reduces battery consumption to 0.01 µA
(typ.).
The LM3208 is available in an 8-pin lead-free micro SMD
package. A high switching frequency (2 MHz typ.) allows use
of tiny surface-mount components. Only three small external
surface-mount components, an inductor and two ceramic
capacitors, are required.
Typical Application
CON
analog input to control power levels and
DS201663
FIGURE 1. LM3208 Typical Application
Features
n 2 MHz (typ.) PWM Switching Frequency
n Operates from a single Li-Ion cell (2.7V to 5.5V)
n Adjustable Output Voltage (0.8V to 3.6V)
n Fast Output Voltage Transient (0.8V to 3.4V in 25µs
n 650mA Maximum load capability
n High Efficiency (95% typ. at 3.9V
n 8-pin micro SMD Package
n Current Overload Protection
n Thermal Overload Protection
Applications
n Cellular Phones
n Hand-Held Radios
n RF PC Cards
n Battery Powered RF Devices
typ.)
IN
, 3.4V
20166301
OUT
www.national.com
at 400mA)
April 2006

LM3208TL/NOPBPB Summary of contents

Page 1

... Only three small external surface-mount components, an inductor and two ceramic capacitors, are required. Typical Application © 2006 National Semiconductor Corporation Features n 2 MHz (typ.) PWM Switching Frequency n Operates from a single Li-Ion cell (2.7V to 5.5V) n Adjustable Output Voltage (0.8V to 3.6V) n Fast Output Voltage Transient (0.8V to 3.4V in 25µ ...

Page 2

Connection Diagrams Order Information Order Number LM3208TL LM3208TLX Note: The actual physical placement of the package marking will vary from part to part. The package marking “X” designates the date code. “V” NSC internal code for die traceability. ...

Page 3

... Absolute Maximum Ratings If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications SGND DD IN PGND to SGND EN, FB, V CON Continuous Power Dissipation (Note 3) Junction Temperature (T ) J-MAX Storage Temperature Range Maximum Lead Temperature (Soldering, 10 sec) Electrical Characteristics face type apply over the full operating ambient temperature range (− ...

Page 4

System Characteristics values in the typical application circuit are used (L = 3.0µH, DCR = 0.12Ω, FDK MIPW3226D3R0M; C TDK C2012X5R0J106K 4.7µF, 6.3V, 0603, TDK C1608X5R0J475M). These parameters are not guaranteed by OUT production testing. Min and Max ...

Page 5

... Refer to System Characteristics table for maximum output current. Note 12: Ripple voltage should be measured at C Note 13: National Semiconductor recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper ESD handling procedures can result in damage. ± ...

Page 6

Typical Performance Characteristics unless otherwise specified.). Quiescent Current vs Supply Voltage ( 0V, No Switching) CON Switching Frequency vs Temperature (V = 1.3V 200mA) OUT OUT Output Voltage vs Temperature (V = 3.6V, V ...

Page 7

Typical Performance Characteristics unless otherwise specified.). (Continued) Current Limit vs Temperature (Large PFET) V Voltage vs Output Voltage CON = 10 Ω) (R LOAD Efficiency vs Output Voltage (V = 3.9V) IN (Circuit in Figure Current Limit ...

Page 8

Typical Performance Characteristics unless otherwise specified.). (Continued) Efficiency vs Output Current (V = 0.8V) OUT Efficiency vs Output Current (R Management) DSON Dark curves are efficiency profiles of either large PFET or small PFET whichever is higher Temperature ...

Page 9

Typical Performance Characteristics unless otherwise specified.). (Continued Temperature DSON (N-ch -200mA) SW Load Transient Response (V = 0.8V) OUT Startup = 3.6V 1.3V OUT LOAD (Circuit in Figure ...

Page 10

Typical Performance Characteristics unless otherwise specified.). (Continued) Shutdown Response (V = 4.2V 3.4V OUT V Transient Response CON (V = 4.2V 0.32V/1.44V CON Output Voltage Ripple (V = 1.3V) OUT www.national.com (Circuit ...

Page 11

Typical Performance Characteristics unless otherwise specified.). (Continued) Output Voltage Ripple in Pulse Skip (V = 3.96V 3.4V OUT (Circuit in Figure 5Ω) LOAD 20166337 3.6V and T ...

Page 12

Block Diagram Operation Description The LM3208 is a simple, step-down DC-DC converter opti- mized for powering RF power amplifiers (PAs) in mobile phones, portable communicators, and similar battery pow- ered RF devices designed to allow the RF PA ...

Page 13

Operation Description Circuit Operation Referring to Figure 1 and Figure 2, the LM3208 operates as follows. During the first part of each switching cycle, the control block in the LM3208 turns on the internal PFET (P-channel MOSFET) switch. This allows ...

Page 14

R Management DSON(P) device uses only a small part of the PFET to minimize drive loss of the PFET. When V is greater than 0.42V (typ.), CON the entire PFET is used to minimize R threshold has about 20mV (typ.) ...

Page 15

... Micro SMD PACKAGE ASSEMBLY AND USE Use of the Micro SMD package requires specialized board layout, precision mounting and careful re-flow techniques, as detailed in National Semiconductor Application Note 1112. Refer to the section Surface Mount Technology (SMD) As- sembly Considerations. For best results in assembly, align- ment ordinals on the PC board should be used to facilitate placement of the device ...

Page 16

Application Information The LM3208 converts higher input voltage to lower output voltage with high efficiency. This is achieved with an inductor-based switching topology. During the first half of the switching cycle, the internal PMOS switch turns on, the input voltage ...

Page 17

... BANNED SUBSTANCE COMPLIANCE National Semiconductor manufactures products and uses packing materials that meet the provisions of the Customer Products Stewardship Specification (CSP-9-111C2) and the Banned Substances and Materials of Interest Specification (CSP-9-111S2) and contain no ‘‘Banned Substances’’ as defined in CSP-9-111S2. ...