LM3208TL/NOPBPB National Semiconductor, LM3208TL/NOPBPB Datasheet - Page 4

• Manufacturer Part Number: LM3208TL/NOPBPB
• Manufacturer: National Semiconductor

Specifications of LM3208TL/NOPBPB

• Lead Free Status / Rohs Status: Supplier Unconfirmed

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T
C
C
V
(S
V
(L
I
Linearity
T
η
V
Line_tr
Load_tr
Max Duty
cycle
OUT, MAX
RESPONSE
ON
CON
EN
CON
CON
OUT
>
System Characteristics
values in the typical application circuit are used (L = 3.0µH, DCR = 0.12Ω, FDK MIPW3226D3R0M; C
TDK C2012X5R0J106K; C
production testing. Min and Max values are specified over the ambient temperature range T
ues are specified at PV
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under which operation of
the device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions, see the
Electrical Characteristics tables.
Note 2: All voltages are with respect to the potential at the GND pins. The LM3208 is designed for mobile phone applications where turn-on after power-up is
controlled by the system controller and where requirements for a small package size overrule increased die size for internal Under Voltage Lock-Out (UVLO) circuitry.
Thus, it should be kept in shutdown by holding the EN pin low until the input voltage exceeds 2.7V.
Note 3: Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at T
125˚C (typ.).
Note 4: The Human body model is a 100pF capacitor discharged through a 1.5kΩ resistor into each pin. (MIL-STD-883 3015.7) The machine model is a 200pF
capacitor discharged directly into each pin.
Note 5: In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be
de-rated. Maximum ambient temperature (T
dissipation of the device in the application (P
following equation: T
Symbol
>
S)
L)
_ripple Ripple voltage at
Time for V
to 3.4V (to reach 3.35V)
Time for V
to 0.8V
V
EN input capacitance
R
threshold
R
threshold
Maximum Output Current
Linearity in control range 0.32V
to 1.44V
Turn on time
(time for output to reach 97% of
final value after Enable low to
high transition)
Efficiency
no pulse skip condition
Ripple voltage at
pulse skip condition
Line transient response
Load transient response
Maximum duty cycle
CON
DSON(P)
DSON(P)
A-MAX
input capacitance
management
management
= T
Parameter
OUT
OUT
IN
J-MAX-OP
= V
OUT
to rise from 0.8V
to fall from 3.4V
DD
= 4.7µF, 6.3V, 0603, TDK C1608X5R0J475M). These parameters are not guaranteed by
– (θ
= EN = 3.6V and T
JA
A-MAX
D-MAX
x P
D-MAX
) is dependent on the maximum operating junction temperature (T
), and the junction-to ambient thermal resistance of the part/package in the application (θ
The following spec table entries are guaranteed by design providing the component
).
V
V
V
Test frequency = 100kHz
EN = 2V, V
Test frequency = 100kHz
Threshold for PFET R
from 960mΩ to 140mΩ
Threshold for PFET R
from 140mΩ to 960mΩ
V
1.44V, L = MIPW3226D3R0
V
0.45V, L = MIPW3226D3R0
V
Monotonic in nature
EN = Low to High, V
3.4V,
I
V
V
V
V
Differential voltage = V
I
V
I
V
T
V
V
I
OUT
OUT
OUT
OUT
R
IN
IN
CON
IN
IN
IN
IN
IN
IN
IN
IN
IN
OUT
IN
= T
= 4.2V, R
= 4.2V, R
= 2.7V to 5.5V, V
= 2.7V to 5.5V, V
= 3.9V (Note 14)
= 3.6V, V
= 3.6V, V
= 3.9V, V
= 2.7V to 4.5V, V
= 5.5V to dropout, V
= 3.6V to 4.2V,
= 3.1/3.6/4.5V, V
≤ 1mA
= 0mA to 400mA (Note 12)
= 650mA (Note 12)
= 50mA to 150mA
= 0.8V, I
= 1V, V
F
A
= 10µs,
= 25˚C unless otherwise specified.
IN
= 2.7V to 5.5V,
OUT
OUT
OUT
LOAD
LOAD
IN
OUT
Conditions
=2.7V to 5.5V,
4
= 0.8V, I
= 1.5V, I
= 3.4V, I
= 100mA
= 5.5Ω
= 15Ω
IN
OUT
CON
CON
OUT
DSON(P)
DSON(P)
IN
= 4.2V, V
OUT
- V
= 0.8V,
= 0.8V to 3.4V,
= 0.45V to
= 0.32V to
OUT
OUT
OUT
OUT
= 3.4V,
to change
to change
= 90mA
= 150mA
= 400mA
OUT
>
1V,
=
0.39
0.37
Min
650
400
−50
100
−3
A
J-MAX-OP
J
= −30˚C to 85˚C. Typical val-
= 150˚C (typ.) and disengages at T
0.42
0.40
Typ
25
35
40
81
89
95
10
60
50
50
5
5
= 125˚C), the maximum power
IN
= 10µF, 6.3V, 0805,
Max
0.45
0.43
+50
+3
40
45
10
10
60
JA
), as given by the
mVp-p
mVp-p
Units
mVpk
mVpk
mA
mA
mV
µs
µs
pF
pF
µs
%
%
%
%
%
V
V
J
=