BAS21J NXP Semiconductors, BAS21J Datasheet - Page 3

• Manufacturer Part Number: BAS21J
• Description: 58T1330
• Manufacturer: NXP Semiconductors

Specifications of BAS21J

• Diode Type: Fast Recovery
• Forward Current If(av): 250mA
• Repetitive Reverse Voltage Vrrm Max: 300V
• Forward Voltage Vf Max: 1.1V
• Reverse Recovery Time Trr Max: 50ns
• Rohs Compliant: Yes

NXP Semiconductors
5. Limiting values
6. Thermal characteristics
BAS21J_1
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
Table 6.
[1]
[2]
[3]
Symbol
V
V
I
I
I
P
T
T
T
Symbol
R
R
F
FRM
FSM
j
amb
stg
RRM
R
tot
th(j-a)
th(j-sp)
Pulse test: t
T
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
cathode 1 cm
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
Reflow soldering is the only recommended soldering method.
Soldering point of cathode tab.
j
= 25 C prior to surge.
Limiting values
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Parameter
repetitive peak reverse
voltage
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak forward
current
total power dissipation
junction temperature
ambient temperature
storage temperature
p
2
.
300 s;
Rev. 01 — 8 March 2007
0.02.
Conditions
in free air
Conditions
t
square wave
T
p
amb
t
t
t
p
p
p
0.25
0.5 ms;
= 100 s
= 1 ms
= 10 ms
25 C
Single high-speed switching diode
[1][2]
[3][4]
[3]
[1]
[2]
Min
-
-
Min
-
-
-
-
-
-
-
-
-
65
65
Typ
-
-
© NXP B.V. 2007. All rights reserved.
Max
300
300
250
1
3
2.3
1.7
550
150
+150
+150
BAS21J
Max
230
55
Unit
V
V
mA
A
A
A
A
mW
2
C
C
C
.
Unit
K/W
K/W
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