BAS21J NXP Semiconductors, BAS21J Datasheet - Page 5

• Manufacturer Part Number: BAS21J
• Description: 58T1330
• Manufacturer: NXP Semiconductors

Specifications of BAS21J

• Diode Type: Fast Recovery
• Forward Current If(av): 250mA
• Repetitive Reverse Voltage Vrrm Max: 300V
• Forward Voltage Vf Max: 1.1V
• Reverse Recovery Time Trr Max: 50ns
• Rohs Compliant: Yes

NXP Semiconductors
BAS21J_1
Product data sheet
Fig 1. Forward current as a function of forward
Fig 3. Reverse current as a function of junction
(mA)
(1) T
(2) T
(3) T
I
F
( A)
10
10
500
400
300
200
100
I
10
R
10
0
1
2
1
2
voltage; typical values
V
temperature; typical values
0
0
amb
amb
amb
R
= 250 V
= 150 C
= 75 C
= 25 C
40
0.5
80
(1)
(2)
120
(3)
1
V
160
F
(V)
T
mhc618
mhc619
j
( C)
200
1.5
Rev. 01 — 8 March 2007
Fig 2. Non-repetitive peak forward current as a
Fig 4. Diode capacitance as a function of reverse
I
(pF)
FSM
(A)
C
10
0.42
0.38
0.34
10
d
0.3
10
1
2
1
Based on square wave currents.
T
function of pulse duration; maximum values
f = 1 MHz; T
voltage; typical values
0
1
j
= 25 C; prior to surge
10
10
amb
Single high-speed switching diode
= 25 C
10
20
2
10
30
© NXP B.V. 2007. All rights reserved.
3
BAS21J
V
t
p
R
( s)
mbg703
mhc621
(V)
10
40
4
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