SJEP120R100A SEMISOUTH, SJEP120R100A Datasheet - Page 3

• Manufacturer Part Number: SJEP120R100A
• Description: 58T5150
• Manufacturer: SEMISOUTH

Specifications of SJEP120R100A

• Rohs Compliant: YES
• Transistor Type: JFET
• Gate-source Cutoff Voltage Vgs(off) Max: 15V
• Power Dissipation Pd: 114W
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-247
• No. Of Pins: 3

SJEP120R100A Rev1.1
10.00
1.00
0.10
0.01
Figure 1. Typical Output Characteristics
Figure 3. Typical Output Characteristics
40
30
20
10
15
12
9
6
3
0
0
2.0
0
0
Figure 5. Gate-Source Current
I
I
D
D
= f(V
= f(V
V
DS
V
1
V
DS
I
, Drain-Source Voltage (V)
DS
GS
GS
DS
, Drain-Source Voltage (V)
); T
); T
, Gate-Source Voltage (V)
= f(V
j
2.5
j
= 150 ° C; parameter: V
2
2
= 25 ° C; parameter: V
GS
); parameter: T
3
3.0
4
4
j
GS
GS
150
5
3.0 V
1.5 V
25
2.5 V
2.0 V
3.0 V
2.5 V
2.0 V
1.5 V
o
o
C
C
3.5
6
6
PRELIMINARY
3/8
Figure 4. Typical Transfer Characteristics
Figure 2. Typical Output Characteristics
Figure 6. Drain-Source On-resistance
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
20
15
10
35
30
25
20
15
10
5
0
5
0
I
R
D
0.00
0
DS(on)
= f(V
0
DS
V
V
= f(I
0.50
DS
GS
I
); T
D
, Drain-Source Voltage (V)
, Gate-Source Voltage (V)
= f(V
D
4
); V
j
= 100 ° C; parameter: V
I
D
GS
GS
1.00
, Drain Current (A)
2
SJEP120R100A
); V
= 3.0; parameter: Tj
8
Silicon Carbide
DS
1.50
= 5 V
12
2.00
150
4
o
GS
C
2.50
16
June 2011
1.5 V
100
2.5 V
2.0 V
3.0 V
25
o
C
o
3.00
C
20
6