SJEP120R100A SEMISOUTH, SJEP120R100A Datasheet - Page 4

• Manufacturer Part Number: SJEP120R100A
• Description: 58T5150
• Manufacturer: SEMISOUTH

Specifications of SJEP120R100A

• Rohs Compliant: YES
• Transistor Type: JFET
• Gate-source Cutoff Voltage Vgs(off) Max: 15V
• Power Dissipation Pd: 114W
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-247
• No. Of Pins: 3

SJEP120R100A Rev1.1
1.E+04
1.E+03
1.E+02
1.E+01
1.50
1.25
1.00
0.75
0.50
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
Figure 7. Drain-Source On-resistance
Figure 11. Gate Threshold Voltage
Figure 9. Typical Capacitance
0
0
0
C = f(V
T
R
T
j
, Junction Temperature (
DS(ON)
j
, Junction Temperature (°C)
Typical
V
Max
300
DS
50
50
DS
, Drain-Source Voltage (V)
= f(T
); V
C
rss
V
GS
th
C
j
); parameter: I
oss
= f(T
= 0 V; f = 1 MHz
600
100
100
j
)
C
5mA
iss
GS
900
o
150
150
C)
-1.5mV/
100mA
25mA
1200
o
C
200
200
PRELIMINARY
4/8
Figure 8. Drain-Source On-resistance
1E-03
1E-04
1E-05
1E-06
1E-07
1E-08
1E-09
0.094
0.092
0.090
0.088
0.086
0.084
0.082
0.080
0.078
0.076
Figure 12. Drain-Source Leakage
Q
3.0
2.5
2.0
1.5
1.0
0.5
0.0
g
= f(V
BV
0.1
I
D
0
0
Figure 10. Gate Charge
= f(V
DS
GS
R
, Drain-Source Blocking Voltage (V)
I
); V
DS(ON)
GS
DS
, Gate-Source Current (mA)
); V
Q
DS
300
1.0
g
, Total Gate Charge (nC)
= f(I
= 600V; I
GS
10
= 0V; parameter: Tj
SJEP120R100A
GS
); T
Silicon Carbide
10.0
D
j
600
= 25
= 5A, T
20
o
C
j
= 25
100.0
900
o
C
100
150
25
30
June 2011
o
o
o
C
C
1000.0
C
1200