IRLBD59N04E International Rectifier, IRLBD59N04E Datasheet
IRLBD59N04E
Specifications of IRLBD59N04E
Related parts for IRLBD59N04E
IRLBD59N04E Summary of contents
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... Operating Temperature Fully Avalanche Rated Zener Gate Protected Description The IRLBD59N04E is a 40V, N-channel HEXFET power MOSFET with gate protection provided by integrated back to back zener diodes. Temperature sensing is given by the change in forward voltage drop of two antiparallel electrically isolated poly-silicon diodes. ...
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... IRLBD59N04E Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) V Clamp Voltage GS g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...
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... Fig 2. Typical Output Characteristics 2 59A 10V 2.0 1 175°C 1.0 0.5 8.0 10.0 -60 -40 -20 0 Fig 4. Normalized On-Resistance IRLBD59N04E VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V 2.7V 300µs PULSE WIDTH 175° Drain-to-Source Voltage ( 100 120 140 160 180 Junction Temperature (° ...
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... IRLBD59N04E 100000 0V, C iss = SHORTED C rss = oss = 10000 Ciss 1000 Coss Crss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000.0 100 175°C 10 25°C 1.0 0.1 0.0 0.5 1.0 1 Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 6 MHZ ...
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... SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com Pulse Width Duty Factor V DS 90% 150 175 10 d(on) Notes: 1. Duty factor Peak T 0.001 t , Rectangular Pulse Duration (sec) 1 IRLBD59N04E D.U. µ d(off thJC C 0 ...
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... IRLBD59N04E D.U 20V 0. Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F D.U. 3mA Current Sampling Resistors Fig 13b. Gate Charge Test Circuit ...
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... R I controlled by Duty Factor "D" SD D.U.T. - Device Under Test Period D = P.W. Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% = 5.0V for Logic Level and 3V Drive Devices GS ® HEXFET power MOSFETs IRLBD59N04E + + P.W. Period [ ] *** V =10V ...
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... IRLBD59N04E 2 Case Outline 5 Lead-D Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig Starting T = 25° 0.55mH 35A. (See Figure 12 35A, di/dt 150A/µ 175° When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended soldering techniques refer to application note #AN-994. ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...