IRLBD59N04E International Rectifier, IRLBD59N04E Datasheet - Page 7

• Manufacturer Part Number: IRLBD59N04E
• Manufacturer: International Rectifier
• Type: Power MOSFETr

Specifications of IRLBD59N04E

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.018Ohm
• Drain-source On-volt: 40V
• Gate-source Voltage (max): ±10V
• Continuous Drain Current: 59A
• Power Dissipation: 130W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 4 +Tab
• Package Type: D2PAK
• Lead Free Status / Rohs Status: Not Compliant

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V
GS
Re-Applied
Voltage
Reverse
Recovery
Current
*
Reverse Polarity of D.U.T for P-Channel
+
-
R
Fig 15. For N-channel
D.U.T
G
***
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
*
GS
P.W.
SD
DS
= 5.0V for Logic Level and 3V Drive Devices
Peak Diode Recovery dv/dt Test Circuit
Waveform
Waveform
Ripple
Body Diode
Period
Body Diode Forward
+
-
dv/dt controlled by R
I
D.U.T. - Device Under Test
Diode Recovery
5%
SD
Current
HEXFET
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
di/dt
Low Stray Inductance
Ground Plane
Current Transformer
Low Leakage Inductance
®
power MOSFETs
D =
-
G
Period
P.W.
+
IRLBD59N04E
[
[
[
V
V
I
SD
GS
DD
]
]
=10V
+
-
V
] ***
DD
7