IRLBD59N04E International Rectifier, IRLBD59N04E Datasheet - Page 2

• Manufacturer Part Number: IRLBD59N04E
• Manufacturer: International Rectifier
• Type: Power MOSFETr

Specifications of IRLBD59N04E

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.018Ohm
• Drain-source On-volt: 40V
• Gate-source Voltage (max): ±10V
• Continuous Drain Current: 59A
• Power Dissipation: 130W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 4 +Tab
• Package Type: D2PAK
• Lead Free Status / Rohs Status: Not Compliant

IRLBD59N04E
Sense Diode Rating
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
I
R
I
L
L
I
I
V
t
Q
t
V
V
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
DSS
GSS
S
SM
on
d(on)
r
d(off)
f
rr
D
S
V
V
2
DS(on)
fs
FM
SD
(BR)DSS
GS(th)
GS
gs
gd
iss
oss
rss
g
rr
F
(BR)DSS
/ T
J
/ T
J
Drain-to-Source Leakage Current
Static Drain-to-Source On-Resistance
Internal Drain Inductance
Internal Source Inductance
Sense Diode Maximum Voltage Drop
Sense Diode Temperature Coefficient
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Clamp Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Parameter
Parameter
J
= 25°C (unless otherwise specified)
-1.30 -1.40 -1.58 mV/°C I
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
Min. Typ. Max. Units
1.0
–––
675
–––
–––
–––
–––
–––
40
10
29
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.044 –––
2190 –––
2.0
5.0
–––
–––
–––
–––
–––
––– 0.018
––– 0.021
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
670
130
7.8
57
84
84
33
67
–––
–––
59
725
–––
–––
250
-1.0
–––
–––
–––
–––
–––
–––
130
1.3
2.0
1.0
50
13
230
86
20
25
18
V/°C
mV
nC
nH
nC
µA
µA
pF
ns
ns
V
V
V
V
S
A
I
V
Reference to 25°C, I
V
V
V
I
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
integral reverse
F
F
GSS
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
G
= 250µA, T
= 250µA, (T
= 35A
= 35A
= 25°C, I
= 25°C, I
= 5.1 ,
= 32V
= 25V
= V
= 25V, I
= 40V, V
= 32V, V
= 5.0V
= 0V
= 0V, I
= 10V, I
= 5.0V, I
= 5.0V
= -5.0V
= 5.0V, See Fig. 6 and 13
= 20V
= 20µA
GS
, I
D
S
F
D
D
D
Conditions
Conditions
D
= 250µA
J
Conditions
GS
GS
= 35A
= 35A, V
See Fig.10
J
= 250µA
= 35A
= 35A
= 25°C
= 30A
= 25°C and 160°C)
= 0V
= 0V, T
www.irf.com
D
GS
= 1mA
J
= 0V
= 150°C
G
G
S
+L
D
D
S
S
)
D